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參數(shù)資料
| 型號(hào)： | MTP4N80 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| 中文描述： | TMOS是功率場(chǎng)效應(yīng)晶體管4.0安培800伏特的RDS（on）\u003d 3.0歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 159K |
| 代理商： | MTP4N80 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
7
2
6
10
14
18
3
5 V
6 V
VDS
≥
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 10 V
15 V
1.8
2.4
2.1
VGS = 0 V
0
200
400
1
100
10000
100
300
600
500
25
°
C
TJ = 125
°
C
1
3
7
0.6
2.2
3.8
4.6
3.0
1.4
5
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 10 V
–50
0.2
0.6
1.0
1.8
2.2
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 2 A
4 V
5
1
1000
2.3
2.5
2.6
2.2
2.0
1.4
6
2
8
4
ID
5.6
2
4
8
6
1.9
10
800
700
7
3
5
1
6
2
8
4
0
1
3
7
5
2
4
8
6
100
°
C
VGS = 10 V
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP4N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
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| MTP4S-E10C | 制造商:Panduit Corp 功能描述:Mutiple Tie Plate, 4 Bundle, M-S Ties, # |
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| MTP4S-E10-C39 | 功能描述:電纜束帶 Mutiple Tie Plate, 4 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長(zhǎng)度:19 mm 寬度:19 mm 抗拉強(qiáng)度: |
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