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參數(shù)資料
| 型號(hào)： | MTP6P20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHM |
| 中文描述： | 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | MTP6P20E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
200
—
—
211
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.1
4.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.81
1.0
Ohm
—
—
6.0
—
7.2
6.3
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 3.0 Adc)
gFS
1.5
3.8
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
540
750
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
128
180
Reverse Transfer Capacitance
—
40
90
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
12
25
ns
Rise Time
(VDD = 100 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
—
32
65
Turn–Off Delay Time
—
24
50
Fall Time
—
16
30
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
22
30
nC
(VDS = 160 Vdc, ID = 6.0 Adc,
—
4.0
—
—
11
—
—
9.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
2.8
2.6
4.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
—
188
—
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
—
152
—
tb
—
36
—
Reverse Recovery Stored Charge
QRR
—
1.595
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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