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參數(shù)資料
| 型號(hào)： | MTP75N05HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS |
| 中文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MTP75N05HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)(3)
V(BR)DSS
50
—
—
54.9
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 50 Vdc, VGS = 0)
(VDS = 50 Vdc, VGS = 0, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
(Cpk
≥
1.5)(3)
VGS(th)
2.0
—
—
6.3
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 37.5 Adc)
(Cpk
≥
3.0)(3)
RDS(on)
—
7.0
9.5
mW
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 150
°
C)
VDS(on)
—
—
—
—
0.86
0.64
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 20 Adc)
gFS
15
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
Coss
Crss
—
2600
2900
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
—
1000
1100
Transfer Capacitance
(Cpk
≥
2.0)(2)
—
230
275
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
15
30
ns
Rise Time
(VDD = 25 Vdc, ID = 75 Adc,
VGS = 10 Vdc,
—
170
340
Turn–Off Delay Time
—
70
140
Fall Time
—
100
200
Gate Charge
VGS = 10 Vdc)
—
71
100
nC
(VDS = 40 Vdc, ID = 75 Adc,
—
13
—
—
33
—
—
26
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 75 Adc, VGS = 0)
(IS = 75 Adc, VGS = 0, TJ = 150
°
C)
(Cpk
≥
10)(2)
VSD
—
—
0.97
0.88
1.1
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
57
—
ns
(IS = 37.5 Adc, VGS = 0,
—
40
—
—
17
—
Reverse Recovery Stored Charge
QRR
—
0.17
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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PDF描述 |
|---|---|
| MTP75N05HD | Power MOSFET 75 Amps, 50 Volts |
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| MTP7P06 | POWER FIELD EFFECT TRANSISTOR |
| MTP9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
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