參數(shù)資料
型號: MTV10N100E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
中文描述: 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數(shù): 3/10頁
文件大小: 269K
代理商: MTV10N100E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
16
12
8
4
0
0
4
8
12
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
20
16
12
8
4
0
2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
6
TJ = 25
°
C
VGS = 10 V
VDS
10 V
6 V
5 V
4 V
100
°
C
25
°
C
TJ = 55
°
C
R
R
1.48
1.4
1.32
1.24
1.16
1.08
1.0
0
4
8
12
16
20
ID, DRAIN CURRENT (AMPS)
15 V
2.4
2
1.6
1.2
0.8
0
0
4
8
12
16
20
25
°
C
0.4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
R
(
100000
10000
1000
100
10
1
0
100
200
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
300
400
500
600
700
800
900 1000
100
°
C
25
°
C
2.8
2.4
2
1.6
1.2
0.8
0.4
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 5 A
I
VGS = 0 V
TJ = 125
°
C
相關(guān)PDF資料
PDF描述
MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM
MTV6N100E TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
MTW33N10E TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
MTW7N80E TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTV1-100SL1 制造商:ITT Interconnect Solutions 功能描述:MTV1-100SL1 - Bulk
MTV1-102SL1 制造商:ITT Interconnect Solutions 功能描述:MTV1-102SL1 - Bulk
MTV1-102SS 制造商:ITT Interconnect Solutions 功能描述:MTV1-102SS - Bulk
MTV1-104PL1 制造商:ITT Interconnect Solutions 功能描述:MTV1-104PL1 - Bulk
MTV1-104SL1 制造商:ITT Interconnect Solutions 功能描述:MTV1-104SL1 - Bulk