參數(shù)資料
型號: MTY16N80E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
中文描述: 16 A, 800 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 239K
代理商: MTY16N80E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
100000
10000
1000
100
10
1
0
100
200
300
400
500
600
700
800
100
°
C
25
°
C
2.5
2.0
1.5
1.0
0.5
0
–50
–25
0
TJ, JUNCTION TEMPERATURE (
°
C)
25
50
75
100
125
150
VGS = 10 V
ID = 8 A
0.6
0.5
0.4
32
4
8
12
ID, DRAIN CURRENT (AMPS)
16
24
20
15 V
0.9
0.6
0
0
8
16
25
°
C
0.3
24
32
24
16
8
0
0
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
16
12
8
4
0
2
3
4
5
6
TJ = 25
°
C
VGS = 10 V
VDS
10 V
VGS = 10 V
TJ = 100
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
VGS = 0 V
TJ = 125
°
C
6 V
5 V
8 V
100
°
C
25
°
C
TJ = –55
°
C
32
28
4 V
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