參數(shù)資料
型號： MUN52xxDW1T1
廠商： ON SEMICONDUCTOR
英文描述： Dual Bias Resistor Transistors
中文描述： 雙偏置電阻晶體管
文件頁數(shù)： 3/8頁
文件大?。?/td> 199K
代理商： MUN52XXDW1T1
LESHAN RADIO COMPANY, LTD.
MUN5211dw–3/8
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,) (Continued)
Characteristic
ON CHARACTERISTICS
(Note 5.)
DC Current Gain
MUN5211DW1T1
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5235DW1T1
Symbol
Min
Typ
Max
Unit
MUN5211DW1T1 Series
h
FE
–
–
–
–
–
–
–
–
–
–
–
–
–
–
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
MUN5230DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
Collector-Emitter Saturation Voltage
(I
C
= 10mA,I
B
= 0.3 mA)
V
CE(sat)
(I
C
= 10mA, I
B
= 5mA) MUN5230DW1T1/MUN5231DW1T1
(I
C
= 10mA, I
B
= 1mA)
MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
–
–
0.25
Vdc
V
OH
4.9
–
Vdc
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN52XXT1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5311DW 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Dual Bias Resistor Transistors
MUN5311DW1T1 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA Complementary RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MUN5311DW1T1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual Bias Resistor Transistor
MUN5311DW1T1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Bias Resistor Transistors
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