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參數(shù)資料
| 型號： | MURS120-13 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER |
| 中文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MURS120-13 |
1
Rectifier Device Data
Ideally suited for high voltage, high frequency rectification, or as free
wheeling and protection diodes in surface mount applications where compact
size and weight are critical to the system.
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150
°
C)
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260
°
C
Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Marking: U1D, U1J
MAXIMUM RATINGS
R i
Rating
Symbol
b l
MURS
U i
Unit
120T3
160T3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
600
Volts
Average Rectified Forward Current
IF(AV)
1.0 @ TL = 155
°
C
2.0 @ TL = 145
°
C
1.0 @ TL = 150
°
C
2.0 @ TL = 125
°
C
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
40
35
Amps
Operating Junction Temperature
TJ
65 to +175
°
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Lead
(TL = 25
°
C)
R
θ
JL
13
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25
°
C)
(iF = 1.0 A, TJ = 150
°
C)
vF
0.875
0.71
1.25
1.05
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25
°
C)
(Rated dc Voltage, TJ = 150
°
C)
iR
2.0
50
5.0
150
μ
A
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/
μ
s)
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)
trr
35
25
75
50
ns
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/
μ
s, Rec. to 1.0 V)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
tfr
25
50
ns
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MURS120T3/D
SEMICONDUCTOR TECHNICAL DATA
ULTRAFAST RECTIFIERS
1.0 AMPERE
200–600 VOLTS
CASE 403A–03
Motorola Preferred Devices
Rev 2
相關PDF資料 |
PDF描述 |
|---|---|
| MURS160 | 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER |
| MURS160-13 | 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER |
| MURS160T3G | Surface Mount Ultrafast Power Rectifiers |
| MURS120T3 | Surface Mount Ultrafast Power Rectifiers |
| MURS120T3G | Surface Mount Ultrafast Power Rectifiers |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MURS120-13-F | 功能描述:整流器 200V 1A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-13-F-CUT TAPE | 制造商:DIODES 功能描述:MURS120 Series 200 V 1 A Surface Mount Super-Fast Rectifier - DO-214AA |
| MURS120A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:ULTRAFAST RECTIFIER VOLTAGE RANGE 200 to 600 Volts CURRENT 1.0 Ampere |
| MURS120CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ULTRAFAST POWER RECTIFIER DIODE IN CERAMIC |
| MURS120-E3/2CT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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