參數(shù)資料
型號: MV1626
廠商: ON SEMICONDUCTOR
元件分類: 變?nèi)荻O管
英文描述: 12 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA
封裝: DO-7, 2 PIN
文件頁數(shù): 1/32頁
文件大?。?/td> 288K
代理商: MV1626
5–159
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Silicon Tuning Diodes
These epitaxial passivated tuning diodes are designed for AFC applications in
radio, TV, and general electronic–tuning.
Maximum Working Voltage of 20 V
Excellent Q Factor at High Frequencies
Solid–State Reliability to Replace Mechanical Tuning Methods
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Vdc
Forward Current
IF
250
mAdc
Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
400
2.67
mW
mW/
°C
Junction Temperature
TJ
+175
°C
Storage Temperature Range
Tstg
– 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
V(BR)R
20
Vdc
Reverse Voltage Leakage Current
(VR = 15 Vdc, TA = 25°C)
IR
0.10
Adc
Series Inductance
(f = 250 MHz, Lead Length
≈ 1/16″)
LS
4.0
nH
Case Capacitance
(f = 1.0 MHz, Lead Length
≈ 1/16″)
CC
0.17
pF
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C20
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Max
MV1626
10.8
12.0
13.2
300
2.0
3.2
MV1628
13.5
15.0
16.5
250
2.0
3.2
MV1630
16.2
18.0
19.8
250
2.0
3.2
MV1634
19.8
22.0
24.2
250
2.0
3.2
MV1638
29.7
33.0
36.3
200
2.0
3.2
MV1648
73.8
82.0
90.2
150
2.0
3.2
MV1650
90.0
100.0
110.0
150
2.0
3.2
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MV1626 thru
MV1650
CASE 51–02
DO–204AA (DO–7)
2
1
6.8 – 100 pF
20 VOLTS
VOLTAGE–VARIABLE
CAPACITANCE DIODES
1
Cathode
2
Anode
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