參數(shù)資料
型號: MVHSMCJ5554
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 整流器
英文描述: 5 A, SILICON, RECTIFIER DIODE, DO-214AB
封裝: PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 113K
代理商: MVHSMCJ5554
Plastic Surface Mount 5 Amp Standard
Rectifier Series (200 –1000 V)
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
HSMCJ5550 thru HSMCJ5554, e3
HSMCJ55
50
thru
HSMCJ55
54
DESCRIPTION
APPEARANCE
This series of rectifier diodes provide a cost-effective plastic surface mount package
with similar electrical parameters as the popular 1N5550 through 1N5554 series. It
fits the same footprint as the DO-214AB (SMC) package. Also its rectangular profile
design makes it easy to handle compared to cylindrical body style packages such as
its standard 1N5550-1N5554US counterpart. This robust design also provides stress
relief with its popular J-bend contacts when mounted on various substrate materials.
It unique axial subassembly also provides a very efficient thermal path for power
dissipation for its 5 Amp forward (IO) current rating and superior surge performance.
This also provides the same low thermal resistance of its military counterpart also
offered by Microsemi in the Tungsten slug surface mount package.
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Standard 5 Amp rectifier series 200 to 1000 V
Economical plastic surface mount with robust axial
subassembly package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are also
available by adding MQ, MX, or MV prefixes
respectively to part number, e.g. MXHSMCJ5550,
MVHSMCJ5554, etc.
RoHS Compliant devices available by adding “e3” suffix
UL94V-0 Flammability Classification
Standard 5 Amp rectifiers series 200 to 1000 V
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust internal construction
Easy for pick-and-place equipment
Low thermal resistance
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating Temperature: -55
oC to +150oC
Storage Temperature: -55
oC to +150oC
Average Rectified Current (IO): 5 Amps @ TL = 55
oC
Thermal Resistance (RθJL): 11
oC /W (junction to
mounting plane)
Forward Surge Current (8.3 ms half sine): 200 Amps
CASE: Void Free Transfer Molded Thermosetting Plastic
(see modified DO-214AB dimensions and notes)
TERMINALS: Tin-lead or RoHS compliant annealed
matte-tin plating solderable to MIL-STD-750, method 2026
POLARITY: Cathode Marked with Band
MARKING: Part number without HSMCJ prefix, e.g. 5550,
5551, 5552, etc.
WEIGHT: 0.4 Grams (Approx.)
ELECTRICAL CHARACTERISTICS @ 25 C
FORWARD VOLTAGE
VF @ 5 A
TYPE
MINIMUM
REVERSE
BREAKDOWN
VOLTAGE
@50
μA
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO AMPS
(TL=55
oC)
MIN.
MAX.
Reverse
Current
IR @ VRWM
μA
REVERSE
RECOVERY
trr
μsec
HSMCJ5550
240
200
5.0
.6V
1.2V
1.0
2.0
HSMCJ5551
480
400
5.0
.6V
1.2V
1.0
2.0
HSMCJ5552
660
600
5.0
.6V
1.2V
1.0
2.0
HSMCJ5553
880
800
5.0
.6V
1.3V
1.0
2.0
HSMCJ5554
1100
1000
5.0
.6V
1.3V
1.0
2.0
Microsemi
Scottsdale Division
Page 1
Copyright
2007
6-20-2007 REV A
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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