參數(shù)資料
型號: MXD1210EPA+
廠商: Maxim Integrated
文件頁數(shù): 1/9頁
文件大?。?/td> 0K
描述: IC CNTRLR NVRAM 8-DIP
產(chǎn)品培訓模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標準包裝: 50
控制器類型: 非易失性 RAM
電源電壓: 4.75 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 8-DIP(0.300",7.62mm)
供應商設備封裝: 8-PDIP
包裝: 管件
General Description
The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-tol-
erance) condition. When the power supply begins to
fail, the RAM is write-protected, and the device switch-
es to battery-backup mode.
Applications
Microprocessor Systems
Computers
Embedded Systems
Features
Battery Backup
Memory Write Protection
230A Operating Mode Quiescent Current
2nA Backup Mode Quiescent Current
Battery Freshness Seal
Optional Redundant Battery
Low Forward-Voltage Drop on VCC Supply Switch
5% or 10% Power-Fail Detection Options
Tests Battery Condition During Power-Up
8-Pin SO Available
MXD1210
Nonvolatile RAM Controller
________________________________________________________________
Maxim Integrated Products
1
8
VCCI
+5V
1
2
7
VBATT2
6
3
5
4
GND
CE
VCC
CMOS
RAM
MXD1210
CE
FROM
DECODER
VBATT1
VCCO
PART
TEMP RANGE
PIN-PACKAGE
MXD1210C/D
0°C to +70°C
Dice*
MXD1210CPA
0°C to +70°C
8 PDIP
MXD1210CSA
0°C to +70°C
8 SO
MXD1210CWE
0°C to +70°C
16 Wide SO
MXD1210EPA
-40°C to +85°C
8 PDIP
MXD1210ESA
-40°C to +85°C
8 SO
MXD1210EWE
-40°C to +85°C
16 Wide SO
MXD1210MJA
-55°C to +125°C
8 CERDIP
Typical Operating Circuit
Ordering Information
CEO
CE
GND
1
2
8
7
VCCI
VBATT2
VBATT1
TOL
VCCO
DIP/SO
TOP VIEW
3
4
6
5
MXD1210
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
N.C.
VCCI
N.C.
VBATT2
N.C.
CEO
N.C.
CE
MXD1210
WIDE SO
VCCO
N.C.
TOL
VBATT1
N.C.
GND
Pin Configurations
19-0154; Rev 2; 11/05
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*
Contact factory for dice specifications.
Devices in PDIP and SO packages are available in both lead-
ed and lead-free packaging. Specify lead free by adding the +
symbol at the end of the part number when ordering. Lead free
not available for CERDIP package.
相關PDF資料
PDF描述
R2D12-2405/H-R CONV DC/DC 2W +/-5VOUT SMD
ISL80103IR18Z-T IC REG LDO 1.8V 3A 10DFN
DS1314S-2+T&R IC CTRLR NV W/BATT MON 3V 8-SOIC
DS1312E IC CONTROLLER NV BW/RST 20-TSSOP
DS1314S-2 IC CTRLR NV W/BATT MON 3V 8-SOIC
相關代理商/技術參數(shù)
參數(shù)描述
MXD1210EPA+ 功能描述:存儲器控制器 Nonvolatile RAM Controller RoHS:否 制造商:Maxim Integrated
MXD1210ESA 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
MXD1210ESA+ 功能描述:IC CNTRLR NVRAM 8-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應商設備封裝:16-SOIC W 包裝:管件
MXD1210ESA+T 功能描述:IC CNTRLR NVRAM 8-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標準包裝:45 系列:- 控制器類型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應商設備封裝:16-SOIC W 包裝:管件
MXD1210ESA-T 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel