- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359267 > MXP2001 Solar Array Diode PDF資料下載
參數(shù)資料
| 型號： | MXP2001 |
| 英文描述： | Solar Array Diode |
| 中文描述： | 太陽能電池陣列二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 206K |
| 代理商： | MXP2001 |
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
Copyright
2002
MXP2001.PDF, 2002-05-03
W
M
.
C
MXP2001
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
P
RODUCT
P
REVIEW
SANTA ANA DIVISION
DESCRIPTION
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
Oxide passivated structure for
very low leakage currents
Epitaxial structure minimizes
forward voltage drop
Forward voltage decreases with
radiation exposure
Qualified for space applications
Thin construction for fit with
photovoltaic cells
Rectangular shape
APPLICATIONS/BENEFITS
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
Description
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc
≤
135
°
C
Junction Temperature Range
Storage Temperature Range
MAXIMUM RATINGS @ 25
°
C (UNLESS OTHERWISE SPECIFIED)
Symbol
V
RRM
V
RWM
V
R
I
F(ave)
T
j
T
stg
Max.
50
50
50
1.0
-65 to +150
-65 to +200
Unit
Volts
Volts
Volts
Amps
°
C
°
C
Description
Forward Voltage
pulse test, pw= 300
μ
s
Junction Capacitance
Breakdown Voltage
ELECTRICAL PARAMETERS
Symbol
IR
25
VR= 2.5 Vdc, Ta= 25
°
C
IR
25
VR= 10 Vdc, Ta= 25
°
C
VF1
IF= 0. 5 A, Ta= 25
°
C
VF2
IF= 1. 0 A, Ta= 25
°
C
Cj1
VR= 4 Vdc
BVR
IR= 200
μ
A, Ta= 25
°
C
Conditions
Min
50
Typ.
10
10
770
790
800
90
Max
200
500
800
820
1000
Unit
nA
nA
mV
mV
pF
V
Reverse (Leakage)
Current (in dark)
M
X
P
2
0
0
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MY1401A | 4.0 SINGLE DIGIT LARGE NUMERIC DISPLAYS |
| MY141A | 0.4 SINGLE DIGIT NUMERIC DISPLAYS |
| MY256C-1 | 0.56 DUAL DIGIT NUMBERIC DISPLAYS |
| MY256C-2 | 0.56 DUAL DIGIT NUMBERIC DISPLAYS |
| MY31C | Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:5mA; Current, It av:8A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MXP22-C | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Monolithic Photodiode Array-Chip |
| MXP-243LD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1.25G SFP Transceiver |
| MXP-243LF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1.25G SFP Transceiver |
| MXP-243LV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1.25G SFP Transceiver |
| MXP-243MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1.25G SFP Transceiver |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。