參數(shù)資料
型號: MXRTCA65KP75A
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 65000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 2/3頁
文件大?。?/td> 117K
代理商: MXRTCA65KP75A
AIRCRAFT DC POWER BUS PROTECTION
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
RTCA65KP48A thru RTCA65KP75CA, e3
RTCA65KP48A–75CA,
e3
GRAPHS
NOTE: This PPP versus time graph allows the designer to use
these parts over a broad power spectrum using the guidelines
illustrated in App Note 104 on Microsemi’s website. Aircraft
transients are described with exponential decaying waveforms.
For suppression of square-wave impulses, derate power and
current to 66% of that for exponential decay as shown in Figure 1.
P
PP
Peak
Pulse
Power
vs.
Pulse
Time
kW
Non-Re
p
etitive
Pulse
Peak
Pulse
Power
(P
PP
)or
cont
inuous
Power
in
%
o
f25
o C
ratin
g
tp – Pulse Time – sec.
TL Lead Temperature oC
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
POWER DERATING
To 50% of Exponentially Decaying Pulse
Correct
Microsemi
Scottsdale Division
Page 2
Copyright
2005
8-08-2005 REV 0
Wrong
FIGURE 3
FIGURE 5
FIGURE 4
FIGURE 6
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
Figure
3
illustrates
minimal
parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
illustrated with figure 4.
The loss of
effectiveness
in
protection
caused
by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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