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| 型號： | MZ0912B50Y |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN microwave power transistors |
| 封裝： | MZ0912B50Y<SOT443A (CDFM2)|<<http://www.nxp.com/packages/SOT443A.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MZ0912B50Y |
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
THERMAL CHARACTERISTICS
T
j
= 125
°
C unless otherwise specified.
Notes
1.
2.
See “Mounting recommendations in the General part of handbook SC19a”
Equivalent thermal impedance under nominal pulse microwave operating conditions; t
p
= 10
μ
s;
δ
= 10%.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C measured in the test jig as shown in Fig.3 and working in class C broadband
mode in pulse; note 1.
Notes
1.
2.
Operating conditions and performance for other pulse formats can be made available on request.
V
CC
during pulse.
List of components (see Fig.3).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
Z
th j-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to heatsink
CW
CW; note 1
notes 1 and 2
4.9
0.2
0.85
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 65 V; I
E
= 0
V
CB
= 50 V; I
E
= 0
V
CE
= 60 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
20
2
20
200
mA
mA
mA
μ
A
I
CES
I
EBO
collector cut-off current
emitter cut-off current
MODE OF OPERATION
f
(GHz)
V
CC
(V)
(2)
P
L
(W)
G
p
(dB)
η
C
(%)
Z
i
/Z
L
(
)
Class C;
t
p
= 10
μ
s;
δ
= 10%
0.960 to 1.215
50
>50
typ. 60
>7
typ. 8
>42
typ. 44
see Figs 6
and 7
COMPONENT
DESCRIPTION
0.65 mm diameter copper wire
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
total length = 12 mm;
height of loop = 9 mm
int. dia. 3 mm; l = 5 mm
L3
4 turns 0.65 mm diameter
copper wire;
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
C1
C2
C3
C4
C5, C6
100 pF
10
μ
F; 50 V
470
μ
F; 63 V
0.6 to 4.5 pF
ATC, ref. 100A101KP50X
Erie, ref. 1250-003
Tekelec, ref. 727.1
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| MZ0912B50Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MZ0912B50Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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