參數(shù)資料
型號: MZ12GW
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 10 kPa Uncompensated Silicon Pressure Sensors
中文描述: 10千帕未補(bǔ)償硅壓力傳感器
文件頁數(shù): 2/13頁
文件大?。?/td> 330K
代理商: MZ12GW
MPVZ12
Sensors
2
Freescale Semiconductor
Figure 1. Uncompensated Pressure Sensor Schematic
VOLTAGE OUTPUT VERSUS APPLIED DIFFERENTIAL PRESSURE
The output voltage of the differential or gauge sensor
increases with increasing pressure applied to the pressure
side (P1) relative to the vacuum side (P2). Similarly, output
voltage increases as increasing vacuum is applied to the
vacuum side (P2) relative to the pressure side (P1).
1
2
3
4
GND
+V
OUT
–V
OUT
+V
S
Sensing
Element
Table 1. Maximum Ratings
(1)
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Rating
Symbol
Value
Unit
Maximum Pressure (P1 > P2)
P
MAX
75
kPa
Burst Pressure (P1 > P2)
P
BURST
100
kPa
Storage Temperature
T
STG
–40 to +125
°
C
Operating Temperature
T
A
–40 to +125
°
C
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MZ-12HS 制造商:Fuji Polymer Industries Co 功能描述: 制造商:FUJITSU 功能描述: