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參數(shù)資料
| 型號： | N04L163WC2AB-85I |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 85 ns, PBGA48 |
| 封裝： | BGA-48 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 186K |
| 代理商： | N04L163WC2AB-85I |
N04L163WC2A
(DOC# 14-02-017 REV H ECN# 01-1268)
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
The N04L163WC2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
4.0A at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1s (Typical)
Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
25ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
RoHS Compliant
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Options
Standby
Current (ISB),
Typical
Operating
Current (Icc),
Typical
N04L163WC2AB
48 - BGA
-40oC to +85oC 2.3V - 3.6V 70ns @ 2.7V
4
A2 mA @ 1MHz
N04L163WC2AT
44 - TSOP II
N04L163WC2AB2
48 - BGA Green
N04L163WC2AT2
44 - TSOP II Green
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| N04L163WC2AT | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit |
| N04L163WC2AT2 | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit |
| N04L163WC2AT2-70I TR | 制造商:ON Semiconductor 功能描述:N04L163WC2A Series 4 Mbit ( 256 K X 16 ) Asynchronous CMOS SRAM - TSSOP II-44 |
| N04L163WC2AT27I | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| N04L163WC2AT-70I | 制造商:Unknown 功能描述: |
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