參數(shù)資料
型號(hào)： NAND01GW4A2BV1E
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁(yè)面，1.8V/3V，NAND閃存芯片
文件頁(yè)數(shù)： 5/57頁(yè)
文件大?。?/td> 410K
代理商： NAND01GW4A2BV1E
5/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Behavioral simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
IBIS simulations models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 14. Program, Erase Times and Program Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . 33
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 15. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 16. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 17. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 18. DC Characteristics, 1.8V Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 19. DC Characteristics, 3V Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 20. AC Characteristics for Command, Address, Data Input . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 21. AC Characteristics for Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 23.Command Latch AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 24.Address Latch AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 25.Data Input Latch AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 26.Sequential Data Output after Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 27.Read Status Register AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 28.Read Electronic Signature AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 29.Page Read A/ Read B Operation AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 30.Read C Operation, One Page AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 31.Page Program AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 32.Block Erase AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 33.Reset AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Ready/Busy Signal Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 34.Ready/Busy AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 35.Ready/Busy Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 36.Resistor Value Versus Waveform Timings For Ready/Busy Signal . . . . . . . . . . . . . . . . 46
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 37.TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline . . . . . . . . . 47
Table 22. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . 47
Figure 38.USOP48 – lead Plastic Ultra Thin Small Outline,12 x 17mm, Package Outline . . . . . . . 48
Table 23. USOP48 – lead Plastic Ultra Thin Small Outline, 12 x 17mm, Package Mechanical Data48
Figure 39.VFBGA55 8 x 10mm - 6x8 active ball array, 0.80mm pitch, Package Outline . . . . . . . . 49
Table 24. VFBGA55 8 x 10mm - 6x8 ball array, 0.80mm pitch, Package Mechanical Data . . . . . . 49
Figure 40.TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package Outline . . . . . . . . 50
Table 25. TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package Mechanical Data 50
Figure 41.VFBGA63 9x11mm - 6x8 active ball array, 0.80mm pitch, Package Outline . . . . . . . . . 51
Table 26. VFBGA63 9x11mm - 6x8 active ball array, 0.80mm pitch, Package Mechanical Data. . 51
Figure 42.TFBGA63 9x11mm - 6x8 active ball array, 0.80mm pitch, Package Outline. . . . . . . . . . 52
Table 27. TFBGA63 9x11mm - 6x8 active ball array, 0.80mm pitch, Package Mechanical Data . . 52
相關(guān)PDF資料
PDF描述
NAND128R3A2BV1E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND128W4A0CV6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A0BN6E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A0CZB6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1F 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GW4A2BV1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW4A2BV1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW4A2BV6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW4A2BV6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW4A2BV6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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