參數(shù)資料
型號: NAND02GR4B2BZB1
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
封裝: 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
文件頁數(shù): 51/57頁
文件大?。?/td> 887K
代理商: NAND02GR4B2BZB1
55/57
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
PART NUMBERING
Table 29. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’. For further
information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND02GR3B
2
A ZA
1
T
Device Type
NAND Flash Memory
Density
01G = 1Gb
02G = 2Gb
04G = 4Gb
08G = 8Gb
Operating Voltage
R = VDD = 1.7 to 1.95V
W = VDD = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
B = 2112 Bytes/ 1056 Word Page
Device Options
2 = Chip Enable Don't Care Enabled
Product Version
A = First Version
B= Second Version
C= Third Version
Package
N = TSOP48 12 x 20mm (all devices)
ZA = VFBGA63 9.5 x 12 x 1mm, 0.8mm pitch (1Gb devices)
ZB = TFBGA63 9.5 x 12 x 1.2mm, 0.8mm pitch (2Gb Dual Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
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