NB3Nxxxxx VCXO Series
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4
Table 6. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = 40°C to +85°C) (Note 4) Symbol
Characteristic
Min
Typ
Max
Unit
IDD
Power Supply Current
90
110
mA
VIH
Input HIGH Voltage, OE
2000
VDD
mV
VIL
Input LOW Voltage, OE
GND
200
800
mV
IIH
Input HIGH Current, OE
100
+100
uA
IIL
Input LOW Current, OE
100
+100
uA
VOH
Output HIGH Voltage
VDD
1195
VDD
945
mV
VOL
Output LOW Voltage
VDD
1945
VDD
1600
mV
VOUTPP
Output Voltage Amplitude
700
mV
4. Measurement taken with outputs terminated with 50 W to VDD 2.0 V. See Figure 3.
Table 7. AC CHARACTERISTICS (VDD = 3.3 ±10%, GND = 0 V, TA = 40°C to +85°C)
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
fCLKOUT
Output Clock Frequency
Crystal fref = 28.276363 MHz
NB3N15552
155.52
MHz
Crystal fref = 28.409090 MHz
NB3N15625
156.25
Crystal fref = 30.703125 MHz
NB3N49152
491.52
Crystal fref = 28.276363 MHz
NB3N62208
622.08
tjit(cp)
RMS Phase Jitter
12 kHz to 20 MHz
0.5
0.9
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
2
8
ps
Cycle to Cycle, PeaktoPeak
1000 Cycles
10
30
Period, RMS
10,000 Cycles
1
4
Period, PeaktoPeak
10,000 Cycles
6
20
tOE/OD
Output Enable/Disable Time
200
ns
FP
Crystal Pull ability (Note 5)
0 ≤ VC ≤ 3.3 V
±100
ppm
VC(bw)
Control Voltage Bandwidth
3 dB
20
kHz
tDUTY_CYCLE Output Clock Duty Cycle
(Measured at Cross Point)
45
50
55
%
tR
Output Rise Time (20% and 80%)
245
400
ps
tF
Output Fall Time (80% and 20%)
245
400
ps
tstart
Startup Time
1
5
ms
5. Gain transfer is positive with a rate of 130 ppm/V.
Table 8. PHASE NOISE PERFORMANCE
Parameter
Characteristic
Condition
155.52 MHZ 156.25 MHz 491.52 MHz 622.08 MHZ
Unit
qNOISE
Output Phase-Noise Performance
100 Hz offset
82
72
70
dBc/Hz
1 kHz offset
106
96
94
dBc/Hz
10 kHz offset
126
116
114
dBc/Hz
100 kHz offset
128
119
116
dBc/Hz
1 MHz offset
135
125
123
dBc/Hz
10 MHz offset
159
151
149
dBc/Hz