Table 6. AC CHARACTERISTICS (VDD
參數(shù)資料
型號(hào): NBVSPA042LN1TAG
廠商: ON Semiconductor
文件頁數(shù): 4/8頁
文件大?。?/td> 0K
描述: IC VCXO LVDS 74.25MHZ 6CLCC
標(biāo)準(zhǔn)包裝: 1,000
系列: PureEdge™
類型: VCXO
頻率: 74.25MHz
電源電壓: 2.97 V ~ 3.63 V
電流 - 電源: 75mA
工作溫度: -40°C ~ 85°C
封裝/外殼: 6-CLCC
包裝: 帶卷 (TR)
供應(yīng)商設(shè)備封裝: 6-CLCC(7x5)
安裝類型: 表面貼裝
NBVSPA015 Series
http://onsemi.com
4
Table 6. AC CHARACTERISTICS (VDD = 3.3 ±10%, GND = 0 V, TA = 40°C to +85°C) (Note 5)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
fCLKOUT
Output Clock Frequency
NBVSPA019
125.00
MHz
NBVSPA027
148.50
NBVSPA018
155.52
NBVSPA017
156.25
NBVSPA024
160.00
NBVSPA015
200.00
NBVSPA042
74.25
Df
Frequency Stability – NBVSPAXXX
(Note 6)
±50
ppm
tjit(f)
RMS Phase Jitter
12 kHz to 20 MHz
0.4
0.9
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
3
8
ps
Cycle to Cycle, PeaktoPeak
1000 Cycles
15
30
ps
Period, RMS
10,000 Cycles
2
4
ps
Period, PeaktoPeak
10,000 Cycles
10
20
ps
tOE/OD
Output Enable/Disable Time
200
ns
FP
Crystal Pullability (Note 7)
0 V ≤ VC ≤ 3.3 V
±100
ppm
VC(bw)
Control Voltage Bandwidth
3 dB
20
KHz
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
45
50
55
%
tR
Output Rise Time (20% and 80%)
245
400
ps
tF
Output Fall Time
(80% and 20%)
245
400
ps
tstart
Startup Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 3.
6. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging.
7. Gain transfer is positive with a rate of 130 ppm/V.
Table 7. PHASE NOISE PERFORMANCE FOR NBVSPXXXX
Parameter
Charac-
teristic
Condition
74.25
MHZ
125.00
MHZ
148.50
MHz
155.52
MHz
156.25
MHZ
160.00
MHz
200.00
MHZ
Units
fNOISE
Output
PhaseN
oise
Performa
nce
100 Hz of Carrier
94
90
91
dBc/Hz
1 kHz of Carrier
122
117
116
117
dBc/Hz
10 kHz of Carrier
132
128
126
127
dBc/Hz
100 kHz of Carrier
132
128
126
127
dBc/Hz
1 MHz of Carrier
142
136
134
135
dBc/Hz
10 MHz of Carrier
160
159
dBc/Hz
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