NBXDPA018
http://onsemi.com
3
Table 6. DC CHARACTERISTICS (VDD = 2.5 V ± 5% or VDD = 3.3 V ± 10%, GND = 0 V, TA = 40°C to +85°C) (Note 2) Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
IDD
Power Supply Current
85
105
mA
VIH
OE and FSEL Input HIGH Voltage
2000
VDD
mV
VIL
OE and FSEL Input LOW Voltage
GND 300
800
mV
IIH
Input HIGH Current
OE
FSEL
100
+100
mA
IIL
Input LOW Current
OE
FSEL
100
+100
mA
DVOD
Change in Magnitude of VOD for
Complementary Output States
0
1
25
mV
VOS
Offset Voltage
1125
1375
mV
DVOS
Change in Magnitude of VOS for
Complementary Output States
0
1
25
mV
VOH
Output HIGH Voltage
VDD = 2.5 V
VDD = 3.3 V
1425
1600
mV
VOL
Output LOW Voltage
VDD = 2.5 V
VDD = 3.3 V
900
1075
mV
VOD
Differential Output Voltage
250
450
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure
5.3. Parameter guaranteed by design verification not tested in production.