VDD CLK 1 2 3 6 5 4 Figure 2. Pin Connectio" />
參數(shù)資料
型號(hào): NBXSBA010LN1TAG
廠商: ON Semiconductor
文件頁數(shù): 2/6頁
文件大?。?/td> 0K
描述: IC OSC XTAL 100MHZ 6-CLCC
產(chǎn)品培訓(xùn)模塊: XO Replacement Overview
標(biāo)準(zhǔn)包裝: 1
系列: PureEdge™
類型: 振蕩器 - 晶體
頻率: 100MHz
電源電壓: 2.97 V ~ 3.63 V
電流 - 電源: 75mA
工作溫度: -40°C ~ 85°C
封裝/外殼: 6-CLCC
包裝: 標(biāo)準(zhǔn)包裝
供應(yīng)商設(shè)備封裝: 6-CLCC(7x5)
安裝類型: 表面貼裝
其它名稱: NBXSBA010LN1TAGOSDKR
NBXSBA010
http://onsemi.com
2
NC
OE
GND
CLK
VDD
CLK
1
2
3
6
5
4
Figure 2. Pin Connections (Top View)
Table 1. PIN DESCRIPTION
Pin No.
Symbol
I/O
Description
1
OE
LVTTL/LVCMOS
Control Input
Output Enable Pin. When left floating pin defaults to logic HIGH and output is active.
See OE pin description Table 2.
2
NC
N/A
No Connect.
3
GND
Power Supply
Ground 0 V
4
CLK
LVPECL Output
NonInverted Clock Output. Typically loaded with 50 W receiver termination resistor to
VTT = VDD 2 V.
5
CLK
LVPECL Output
Inverted Clock Output. Typically loaded with 50 W receiver termination resistor to
VTT = VDD 2 V.
6
VDD
Power Supply
Positive power supply voltage. Voltage should not exceed 3.3 V ±10%.
Table 2. OUTPUT ENABLE TRISTATE FUNCTION
OE Pin
Output Pins
Open
Active
HIGH Level
Active
LOW Level
High Z
Table 3. ATTRIBUTES
Characteristic
Value
Internal Default State Resistor
170 kW
ESD Protection
Human Body Model
Machine Model
2 kV
200 V
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VDD
Positive Power Supply
GND = 0 V
4.6
V
Iout
LVPECL Output Current
Continuous
Surge
25
50
mA
TA
Operating Temperature Range
40 to +85
°C
Tstg
Storage Temperature Range
55 to +120
°C
Tsol
Wave Solder
See Figure 5
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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