參數(shù)資料
型號(hào)： NCN6004AFTBR2
廠(chǎng)商： ON Semiconductor
文件頁(yè)數(shù)： 17/40頁(yè)
文件大小： 0K
描述： IC INTERFACE SAM/SIM DUAL 48TQFP
標(biāo)準(zhǔn)包裝： 1
應(yīng)用： PC，PDA
接口： 微控制器
電源電壓： 1.8 V ~ 5.5 V
封裝/外殼： 48-TQFP 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 48-TQFP（7x7）
包裝： 剪切帶 (CT)
安裝類(lèi)型： 表面貼裝
其它名稱(chēng)： NCN6004AFTBR2OSCT
NCN6004A
http://onsemi.com
24
Since the output inductor L1 and the reservoir capacitor
C1 carry relative high peak current, low ESR devices must
be used to prevent the system from poor output voltage
ripple and low efficiency. Using ceramic capacitors, X5R or
X7R type, are recommended, splitting the 10
mF in two
separate parts when there is a relative long distance between
the CRD_VCC_x output pin and the card VCC input. On the
other hand, the inductor shall have an ESR below 1.0
W to
achieve the high efficiency over the full temperature range.
However, inductor with 2.0
W ESR can be used when a slight
decrease of the efficiency is acceptable at system level.
Ton Toff
CRD_VCC Charged
Charge CRD_VCC
Next CRD_VCC Charge
Q1 / Q4
Q2 / Q3
IL
(Time is not to scale)
CRD_VCC
CRD_VCC Voltage Regulated
Ipeak
V
ripple
Q5/Q6
Figure 16. Theoretical DC/DC Operating
When the CRD_VCC is programmed to zero volt, or when
the card is extracted from the socket, the active pull down Q5
rapidly discharges the output reservoir capacitor, making
sure the output voltage is below 0.40 V when the card slides
across the contacts.
Based on the experiments carried out during the
NCN6004A characterization, the best comprise, at time of
printing
this
document,
is
to
use
two
4.7
mF/10 V/ceramic/X7R capacitor in parallel to achieve
the CRD_VCC filtering. The ESR will not extend 50 m
W
over the temperature range and the combination of standard
parts provide an acceptable –20% to +20% tolerance,
together with a low cost. Table 6 shows a quick comparison
between the most common type of capacitors. Obviously,
the capacitor must be SMD type to achieve the extremely
low ESR and ESL necessary for this application.
Figure 17 illustrates the CRD_VCC ripple observed in the
NCN6004A demo board running with X7R ceramic
capacitors.
Table 6. Ceramic/Electrolytic Capacitors Comparison
Manufacturer
Type/Series
Format
Max Value
Tolerance
Typ. Z @ 500 kHz
MURATA
CERAMIC/GRM225
0805
10
mF/6.3 V
20% /+20%
30 m
W
MURATA
CERAMIC/GRM225
0805
4.7
mF/6.3 V
20% /+20%
30 m
W
VISHAY
Tantalum/594C/593C
1206
10
mF/16 V
450 m
W
VISHAY
Electrolytic/94SV
1812
10
mF/10 V
20%/+20%
400 m
W
Miscellaneous
Electrolytic Low Cost
1812
10
mF/10 V
35%/+50%
2.0
W
相關(guān)PDF資料
PDF描述
ATTINY13V-10MMU MCU AVR 1K ISP FLASH 1.8V 10-DFN
MC33560DWR2 IC INTERFACE PWR MANAGMT 24SOIC
V375C36H150BG2 CONVERTER MOD DC/DC 36V 150W
31-318-RFX BULKHEAD JACK,CRIMP,RG-174
MC33560DTBR2 IC INTERFACE PWR MANAGMT 24TSSOP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NCN6004AFTBR2G 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart Card Interface RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray
NCN6010 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010/D 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
NCN6010D 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SIM Card Supply and Level Shifter
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*