參數(shù)資料
型號(hào): NCP511SN33T1
廠商: ON SEMICONDUCTOR
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 150 mA CMOS Low Iq Low-Dropout Voltage Regulator
中文描述: 3.3 V FIXED POSITIVE LDO REGULATOR, 0.2 V DROPOUT, PDSO5
封裝: SC-59, SOT-23, TSOP-5
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 85K
代理商: NCP511SN33T1
NCP511
http://onsemi.com
9
0
3
100
2
120
40
160
Time (ms)
V
o
O
2
1
20
4
1
0
140
80
60
0
E
T
A
= 25
°
C
V
in
= 3.5 V
V
out
= 3.0 V
C = 1.0 F
R = 1.0 M
C = 0.1 F
No Delay
3
Output
R
1
2
3
5
4
Input
1.0 F
1.0 F
Output
1
2
3
5
4
Input
1.0 F
1.0 F
Q2
Q1
R3
R1
R2
Output
1
2
3
5
4
Input
1.0 F
1.0 F
Output
1
2
3
5
4
Enable
1.0 F
1.0 F
C
Output
1
2
3
5
4
Input
1.0 F
1.0 F
Q1
R
5.6 V
R = 1.0 M
R = 1.0 mW
Figure 18. Current Boost Regulator
Figure 19. Current Boost Regulator
with Short Circuit Limit
Figure 20. Delayed Turnon
Figure 21. Delayed Turnon
Figure 22. Input Voltages Greater than 6.0 V
A regulated output can be achieved with input voltages that
exceed the 6.0 V maximum rating of the NCP511 series with
the addition of a simple preregulator circuit. Care must be
taken to prevent Q1 from overheating when the regulated
output (V
out
) is shorted to GND.
The NCP511 series can be current boosted with a PNP transis-
tor. Resistor R in conjunction with V
BE
of the PNP determines
when the pass transistor begins conducting; this circuit is not
short circuit proof. Input/Output differential voltage minimum is
increased by V
BE
of the pass resistor.
Short circuit current limit is essentially set by the V
BE
of Q2 and
R1. I
SC
= ((V
BEQ2
ib * R2) / R1) + I
O(max) Regulator
If a delayed turnon is needed during power up of several volt-
ages then the above schematic can be used. Resistor R, and
capacitor C, will delay the turnon of the bottom regulator. A
few values were chosen and the resulting delay can be seen in
Figure 21.
The graph shows the delay between the enable signal and
output turnon for various resistor and capacitor values.
Q1
R
APPLICATION CIRCUITS
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