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參數(shù)資料
| 型號： | NCS2551SNT1G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP CFA MONO 500MHZ 5TSOP |
| 產(chǎn)品變化通告： | Product Discontinuation 21/Jun/2007 |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 1400 V/µs |
| -3db帶寬： | 500MHz |
| 電流 - 輸入偏壓： | 3.2µA |
| 電壓 - 輸入偏移： | 10000µV |
| 電流 - 電源： | 5.5mA |
| 電流 - 輸出 / 通道： | 100mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 10 V，±2.5 V ~ 5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 6-TSOP（0.059"，1.50mm 寬）5 引線 |
| 供應(yīng)商設(shè)備封裝： | 5-TSOP |
| 包裝： | 帶卷 (TR) |
NCS2551
http://onsemi.com
3
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV
200 V
1.0 kV
Moisture Sensitivity (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
1. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
Vdc
Input Voltage Range
VI
vVS
Vdc
Input Differential Voltage Range
VID
vVS
Vdc
Output Current
IO
100
mA
Maximum Junction Temperature (Note 2)
TJ
150
°C
Operating Ambient Temperature
TA
40 to +85
°C
Storage Temperature Range
Tstg
60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, JunctiontoAir
RqJA
158
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the
plastic
packages,
the
maximum
safe
junction
temperature is 150
°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage.
Figure 3. Power Dissipation vs. Temperature
800
400
0
50
0
75
150
MAXIMUM
POWER
DISSIP
A
TION
(mW)
AMBIENT TEMPERATURE (C)
200
25
50
100
125
1000
600
1400
1200
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