參數(shù)資料
型號(hào): NCV33163
廠商: ON SEMICONDUCTOR
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁數(shù): 3/16頁
文件大?。?/td> 203K
代理商: NCV33163
NCV33163
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
CC
= 15 V, Pin 16 = V
CC
, C
T
= 620 pF, for typical values T
A
= 25
°
C, for min/max values
T
A
= -40
°
C to +115
°
C.)
Characteristic
Symbol
Min
Typ
Max
Unit
OSCILLATOR
Frequency
T
= 25
°
C
Total Variation over V
CC
= 2.5 V to 60 V, and Temperature
f
OSC
46
45
50
-
54
55
kHz
Charge Current
I
chg
-
225
-
A
Discharge Current
I
dischg
-
25
-
A
Charge to Discharge Current Ratio
I
chg
/I
dischg
8.0
9.0
10
-
Sawtooth Peak Voltage
V
OSC(P)
-
1.25
-
V
Sawtooth Valley Voltage
V
OSC(V)
-
0.55
-
V
FEEDBACK COMPARATOR 1
Threshold Voltage
T
A
= 25
°
C
Line Regulation (V
CC
= 2.5 V to 60 V, T
A
= 25
°
C)
Total Variation over Line, and Temperature
V
th(FB1)
4.9
-
4.85
5.05
0.008
-
5.2
0.03
5.25
V
%/V
V
Input Bias Current (V
FB1
= 5.05 V)
I
IB(FB1)
-
100
200
A
FEEDBACK COMPARATOR 2
Threshold Voltage
T
= 25
°
C
Line Regulation (V
= 2.5 V to 60 V, T
= 25
°
C)
Total Variation over Line, and Temperature
V
th(FB2)
1.225
-
1.213
1.25
0.008
-
1.275
0.03
1.287
V
%/V
V
Input Bias Current (V
FB2
= 1.25 V)
I
IB(FB2)
- 0.4
0
0.4
A
CURRENT LIMIT COMPARATOR
Threshold Voltage
T
A
= 25
°
C
Total Variation over V
CC
= 2.5 V to 60 V, and Temperature
V
th(Ipk Sense)
-
230
250
-
-
270
mV
Input Bias Current (V
Ipk (Sense)
= 15 V)
I
IB(sense)
-
1.0
20
A
DRIVER AND OUTPUT SWITCH
(Note 3)
Sink Saturation Voltage (I
= 2.5 A, Pins 14, 15 grounded)
Non-Darlington Connection (R
= 110 to V
CC
, I
SW
/I
DRV
20)
Darlington Connection (Pins 9, 10, 11 connected)
V
CE(sat)
-
-
0.6
1.0
1.0
1.4
V
Collector Off-State Leakage Current (V
CE
= 60 V)
I
C(off)
-
0.02
100
A
Bootstrap Input Current Source (V
BS
= V
CC
+ 5.0 V)
I
source(DRV)
0.5
2.0
4.0
mA
Bootstrap Input Zener Clamp Voltage (I
Z
= 25 mA)
V
Z
V
CC
+ 6.0
V
CC
+ 7.0
V
CC
+ 9.0
V
LOW VOLTAGE INDICATOR
Input Threshold (V
FB2
Increasing)
V
th
1.07
1.125
1.18
V
Input Hysteresis (V
FB2
Decreasing)
V
H
-
15
-
mV
Output Sink Saturation Voltage (I
sink
= 2.0 mA)
V
OL(LVI)
-
0.15
0.4
V
Output Off-State Leakage Current (V
OH
= 15 V)
I
OH
-
0.01
5.0
A
TOTAL DEVICE
Standby Supply Current (V
CC
= 2.5 V to 60 V, Pin 8 = V
CC
,
Pins 6, 14, 15 = Gnd, remaining pins open)
I
CC
-
6.0
10
mA
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 1500 V per MIL-STD-883, Method 3015.
Machine Model Method 150 V.
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
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