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參數(shù)資料
| 型號(hào)： | ND2012L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistors(最大漏源導(dǎo)通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導(dǎo)通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | ND2012L |
ND2012L/2020L
Siliconix
S-52426—Rev. C, 14-Apr-97
1
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSV
Min (V)
r
DS(on)
Max ( )
V
GS(off)
(V)
I
D
(A)
ND2012L
200
12
–1.5 to –4
0.16
ND2020L
20
–0.5 to –2.5
0.132
Features
High Breakdown Voltage: 220 V
Normally “On” Low r
DS
Switch: 9
Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
Benefits
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Applications
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
ND2012L
ND2020L
Unit
Drain-Source Voltage
V
DS
200
200
V
Gate-Source Voltage
V
GS
30
30
Continuous Drain Current (T
J
= 150 C)
T
A
= 25 C
I
D
0.16
0.132
T
A
= 100 C
0.1
0.083
A
Pulsed Drain Current
a
I
DM
0.8
0.8
Power Dissipation
T
A
= 25 C
P
D
0.8
0.8
W
T
A
= 100 C
0.32
0.32
Maximum Junction-to-Ambient
R
thJA
156
156
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| ND2012L-TR1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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