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參數(shù)資料
| 型號： | ND4321 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
| 中文描述： | 的POW - r -隔離臺BLOk反應(yīng)腔雙可控硅模塊（二一零安培/高達(dá)2000伏特） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 101K |
| 代理商： | ND4321 |
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Dual SCR Isolated Module
210 Amperes / Up to 2000 Volts
Revision Date: 11/1/2001
ND43__21
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
Repetitive Peak Forward Leakage Current
IDRM
Up to 2000V, TJ=130°C
50
mA
Repetitive Peak Reverse Leakage Current
IRRM
Up to 2000V, TJ=130°C
50
mA
Peak On-State Voltage
VFM
ITM=625A
1.40
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 130°C, I = 15%IT(AV) to πIT(AV)
0.813
0.810
V
m
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
TJ = 130°C, I = πIT(AV) to ITSM
0.947
0.641
V
m
VTM Coefficients, Full Range
TJ = 130°C, I = 15%IT(AV) to ITSM
VTM = A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.7324
9.80 E-3
5.83 E-4
6.02 E-3
Minimum dV/dt
dV/dt
Exponential to 2/3 VDRM
Tj=130°C, Gate Open
500
V/s
Turn-On Time (Typical)
ton
ITM = 100A, VD = 100V
7
(Typical)
s
Turn-Off Time (Typical)
t off
TJ = 130°C, IT= 250A
Re-Applied dV/dt = 20V/s
Linear to 0.8 VDRM
150
(Typical)
s
Gate Trigger Current
IGT
Tj=25°C, VD=12V
150
mA
Gate Trigger Voltage
VGT
Tj=25°C, VD=12V
3.0
Volts
Non-Triggering Gate Voltage
VGDM
Tj=130°C, VD= VDRM
0.15
Volts
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
RΘJ-C
Per Module, both conducting
Per Junction both conducting
0.07
0.14
°C/W
Thermal Impedance Coefficients
ZΘJ-C
ZΘJ-C= K1 (1-exp(-t/
τ1))
+ K2 (1-exp(-t/
τ2))
+ K3 (1-exp(-t/
τ3))
+ K4 (1-exp(-t/
τ4))
K1 = 5.27E-3
K2 = 1.17E-2
K3 = 5.26E-2
K4 = 6.97E-2
τ1 = 1.69E-4
τ2 = 2.07E-2
τ3 = 2.37E-1
τ4 = 2.46
Thermal Resistance, Case to Sink Lubricated
RΘC-S
Per Module
0.03
°C/W
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