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參數(shù)資料
| 型號(hào)： | NJ72L |
| 廠(chǎng)商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor |
| 中文描述： | 硅結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | NJ72L |
F-28
01/99
NJ72L Process
Silicon Junction Field-Effect Transistor
VHF/UHF Amplifier
Absolute maximum ratings at 25C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ72L Process.
Datasheet
U310
U311
U350
At 25°C free air temperature:
NJ72L Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 20
– 25
V
IG = – 1 A, VDS = V
Reverse Gate Leakage Current
IGSS
– 10
– 100
pA
VGS = – 15V, VDS = V
Drain Saturation Current (Pulsed)
IDSS
590
mA
VDS = 15V, VGS = V
Gate Source Cutoff Voltage
VGS(OFF)
– 1
– 5.5
V
VDS = 15V, ID = 1 nA
Dynamic Electrical Characteristics
Forward Transconductance
gfs
22
mS
VDS = 15V, VGS = V
f = 1 kHz
Drain Source ON Resistance
rds(on)
40
ID = 1 mA, VGS = V
f = 1 kHz
Input Capacitance
Ciss
7pF
VDS = V, VGS = – 10V
f = 1 MHz
Feedback Capacitance
Crss
2.5
pF
VDS = V, VGS = – 10V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
G
S-D
Die Size = 0.020" X 0.020"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Databook.fxp
1/13/99 2:09 PM
Page F-28
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