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參數資料
| 型號： | NLAS7242MUGEVB |
| 廠商： | ON Semiconductor |
| 文件頁數： | 4/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | BOARD EVAL DPDT SWITCH NLAS7242 |
| 設計資源： | NLAS7242MUGEVB Gerber Files NLAS7242MUGEVB BOM NLAS7242MUGEVB Schematic |
| 標準包裝： | 1 |
| 主要目的： | 接口，USB 2.0 開關 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | NLAS7242 |
| 主要屬性： | 1 x DPDT 開關 |
| 已供物品： | 板 |
| 其它名稱： | NLAS7242MUGEVBOS |
NLAS7242
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
CONTROL INPUT, OUTPUT ENABLE VOLTAGE (Typical: T = 25°C)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
40
°C to +85°C
Unit
Min
Typ
Max
VIH
S, OE
Control Input, Output
Enable HIGH Voltage
(See Figure 11)
2.7
3.3
4.2
1.25
1.3
1.4
V
VIL
S, OE
Control Input, Output
Enable LOW Voltage
(See Figure 11)
2.7
3.3
4.2
0.35
0.4
0.5
V
IIN
S, OE
Current Input, Output
Enable Leakage Current
0 ≤ VIS ≤ VCC
1.65 4.5
±1.0
mA
SUPPLY CURRENT AND LEAKAGE (Typical: T = 25°C, VCC = 3.3 V)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
40
°C to +85°C
Unit
Min
Typ
Max
ICC
VCC
Quiescent Supply Current
0 ≤ VIS ≤ VCC; ID = 0 A
0 ≤ VIS ≤ VCC 0.5 V
1.65 3.6
3.6 4.5
1.0
mA
IOZ
OFF State Leakage
0 ≤ VIS ≤ VCC
1.65 4.5
±0.1
±1.0
mA
IOFF
D+, D
Power OFF Leakage
Current
0 ≤ VIS ≤ VCC
0
±1.0
mA
LIMITED VIS SWING ON RESISTANCE (Typical: T = 25°C)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
40
°C to +85°C
Unit
Min
Typ
Max
RON
OnResistance (Note 1)
ION = 8 mA
VIS = 0 V to 0.4 V
2.7
3.3
4.2
6.0
5.5
5.0
8.6
7.6
7.0
W
RFLAT
OnResistance Flatness
ION = 8 mA
VIS = 0 V to 0.4 V
2.7
3.3
4.2
0.55
0.30
0.20
W
DRON
OnResistance Matching
ION = 8 mA
VIS = 0 V to 0.4 V
2.7
3.3
4.2
0.60
W
1. Guaranteed by design.
2. Flatness is defined as the difference between the maximum and minimum value of OnResistance as measured over the specified analog
signal ranges.
3. DRON = RON(max) RON(min) between HSD1+ and HSD1 or HSD2+ and HSD2.
FULL VIS SWING ON RESISTANCE (Typical: T = 25°C)
Symbol
Pins
Parameter
Test Conditions
VCC (V)
40
°C to +85°C
Unit
Min
Typ
Max
RON
OnResistance
ION = 8 mA
VIS = 0 V to VCC
2.7
3.3
4.2
10
8.0
7.0
13.5
9.75
8.50
W
RFLAT
OnResistance Flatness
ION = 8 mA
VIS = 0 V to VCC
2.7
3.3
4.2
4.5
3.0
2.5
W
DRON
OnResistance
ION = 8 mA
VIS = 0 V to VCC
2.7
3.3
4.2
0.60
W
4. Guaranteed by design.
5. Flatness is defined as the difference between the maximum and minimum value of OnResistance as measured over the specified analog
signal ranges.
6. DRON = RON(max) RON(min) between HSD1+ and HSD1 or HSD2+ and HSD2.
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