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參數(shù)資料
| 型號： | NLU1G04MUTCG |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC INVERTER SGL HS CMOS 6-UDFN |
| 標準包裝： | 3,000 |
| 邏輯類型： | 逆變器，緩沖器 |
| 電路數(shù)： | 1 |
| 輸入數(shù)： | 1 |
| 電源電壓： | 1.65 V ~ 5.5 V |
| 電流 - 靜態(tài)（最大值）： | 1µA |
| 輸出電流高，低： | 8mA，8mA |
| 額定電壓和最大 CL 時的最大傳播延遲： | 7.5ns @ 4.5V ~ 5.5V，50pF |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 供應(yīng)商設(shè)備封裝： | 6-UDFN（1.2x1） |
| 封裝/外殼： | 6-UFDFN |
| 包裝： | 帶卷 (TR) |
NLU1G04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
0.5 to +7.0
V
IIK
DC Input Diode Current
VIN < GND
20
mA
IOK
DC Output Diode Current
VOUT < GND
±20
mA
IO
DC Output Source/Sink Current
±12.5
mA
ICC
DC Supply Current Per Supply Pin
±25
mA
IGND
DC Ground Current per Ground Pin
±25
mA
TSTG
Storage Temperature Range
65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature Under Bias
150
°C
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating Oxygen
Index: 28 to 34
UL 94 V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
ILATCHUP1
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22A114A.
3. Tested to EIA / JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
Positive DC Supply Voltage
1.65
5.5
V
VIN
Digital Input Voltage
0
5.5
V
VOUT
Output Voltage
0
5.5
V
TA
Operating FreeAir Temperature
55
+125
°C
Dt/DV
Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
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