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參數(shù)資料
型號(hào): NLV27WZ16DFT2G
廠商: ON Semiconductor
文件頁數(shù): 2/6頁
文件大?。?/td> 0K
描述: IC CLOCK BUFFER DRIVER 1:1 SC88
標(biāo)準(zhǔn)包裝: 3,000
類型: 緩沖器/驅(qū)動(dòng)器
電路數(shù): 2
比率 - 輸入:輸出: 1:1
差分 - 輸入:輸出: 無/無
輸入: LVCMOS,LVTTL
輸出: LVCMOS,LVTTL
電源電壓: 1.65 V ~ 5.5 V
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP,SC-88,SOT-363
供應(yīng)商設(shè)備封裝: SC-88
包裝: 帶卷 (TR)
NL27WZ16
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Units
VCC
DC Supply Voltage
0.5 to +7.0
V
VI
DC Input Voltage
0.5 ≤ VI ≤ +7.0
V
VO
DC Output Voltage
Output in Z or LOW State (Note 1)
0.5 ≤ VO ≤ +7.0
V
IIK
DC Input Diode Current
VI < GND
50
mA
IOK
DC Output Diode Current
VO < GND
50
mA
IO
DC Output Sink Current
±50
mA
ICC
DC Supply Current per Supply Pin
±100
mA
IGND
DC Ground Current per Ground Pin
±100
mA
TSTG
Storage Temperature Range
65 to +150
°C
PD
Power Dissipation in Still Air
SC88, TSOP6
200
mW
qJA
Thermal Resistance
SC88, TSOP6
333
°C/W
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature Under Bias
+150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
Above VCC and Below GND at 85°C (Note 5)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. IO absolute maximum rating must be observed.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Units
VCC
Supply Voltage
Operating
Data Retention Only
1.65
1.5
5.5
V
VI
Input Voltage
0
5.5
V
VO
Output Voltage (High or LOW State)
0
5.5
V
TA
Operating FreeAir Temperature
55
+125
°C
Dt/DV
Input Transition Rise or Fall Rate
VCC = 1.8 V ±0.15 V
VCC = 2.5 V ±0.2 V
VCC = 3.0 V ±0.3 V
VCC = 5.0 V ±0.5 V
0
20
10
5
ns/V
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