- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296697 > NP1500SDMCT3G (ON SEMICONDUCTOR) 180 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA PDF資料下載
參數(shù)資料
| 型號： | NP1500SDMCT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | 180 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | NP1500SDMCT3G |
NPSDMC Series
http://onsemi.com
4
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the IDRM. The IDRM should be as low as
possible. The typical value is less than 5
mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V(BO) is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The VDRM is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V(BO) is typically a 2030% higher than the VDRM. Based
on these characteristics it is critical to choose devices which
have a VDRM higher than the normal circuit operating
voltage, and a V(BO) which is less than the failure threshold
of the protected equipment circuit. A low onstate voltage
Vt allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
Normal System
Operating Voltage
Equipment Failure Threshold
Time
Transient Surge
TSPD Protection
(short)
Figure 5. Protection During a Transient Surge
TSPD Transparent
(open)
TSPD Transparent
(open)
V
olts
TSPD Protection Voltage
Upper Limit
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR1089CORE,ITUK.20, ITUK.21, ITUK.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
When selecting a TSPD use the following key selection
parameters.
OffState Voltage VDRM
Choose a TSPD that has an OffState Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
VDRM should be greater than the peak value of these two
components:
VDRM > 212 + 48 = 260 VDRM
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
相關PDF資料 |
PDF描述 |
|---|---|
| NP1800SDMCT3G | 220 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| NPD1505 | 15 A, 50 V, SILICON, RECTIFIER DIODE |
| NPI31W150MTRF | INDUCTOR, 15UH, 3.1A, 0.05OHM, SMT |
| NPI31W100MTRF | 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD |
| NPI31W1R0MTRF | 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NP1500U | 制造商:ORION POWER SYSTEMS, INC. 功能描述:UPS; Network Pro 1500 Line Interactive; Rated at 1500 VA and 1300 Watts |
| NP15P04SLG-E1-AY | 功能描述:MOSFET P-CH -40V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP15P06SLG-E1-AY | 功能描述:MOSFET P-CH -60V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP15P06SLG-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| NP16 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16 AMPERE SILICON RECTIFIER |
發(fā)布緊急采購，3分鐘左右您將得到回復。