參數(shù)資料
      型號: NSI45015WT1G
      廠商: ON Semiconductor
      文件頁數(shù): 2/7頁
      文件大?。?/td> 166K
      描述: IC LED DRIVER LINEAR SOD-123
      標(biāo)準(zhǔn)包裝: 1
      功能: *
      檢測方法: *
      精確度: *
      輸入電壓: *
      電流 - 輸出: *
      工作溫度: *
      安裝類型: 表面貼裝
      封裝/外殼: SOD-123
      供應(yīng)商設(shè)備封裝: SOD-123
      包裝: 標(biāo)準(zhǔn)包裝
      其它名稱: NSI45015WT1GOSDKR
      NSI45015WT1G
      http://onsemi.com
      2
      ELECTRICAL CHARACTERISTICS (T
      A
       = 25癈 unless otherwise noted)
      Characteristic
      Symbol
      Min
      Typ
      Max
      Unit
      Steady State Current @ Vak = 7.5 V (Note 1)
      I
      reg(SS)
      12
      15
      18
      mA
      Voltage Overhead (Note 2)
      V
      overhead
      1.8
      V
      Pulse Current @ Vak = 7.5 V (Note 3)
      I
      reg(P)
      12.7
      16.5
      19.4
      mA
      Capacitance @ Vak = 7.5 V (Note 4)
      C
      2.5
      pF
      Capacitance @ Vak = 0 V (Note 4)
      C
      5.7
      pF
      1.  I
      reg(SS)
       steady state is the voltage (Vak) applied for a time duration e 10 sec, using FR4 @ 300 mm
      2
       1 oz. Copper traces, in still air.
      2.  V
      overhead
       = V
      in
        V
      LEDs
      . V
      overhead
       is typical value for 75% I
      reg(SS)
      .
      3.  I
      reg(P)
       nonrepetitive pulse test. Pulse width t d 300 msec.
      4.  f = 1 MHz, 0.02 V RMS.
      THERMAL CHARACTERISTICS
      Characteristic
      Symbol
      Max
      Unit
      Total Device Dissipation (Note 5) T
      A
       = 25癈
       Derate above 25癈
      P
      D
      208
      1.66
      mW
      mW/癈
      Thermal Resistance, JunctiontoAmbient (Note 5)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JA
      600
      癈/W
      Thermal Reference, LeadtoAmbient (Note 5)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">LA
      404
      癈/W
      Thermal Reference, JunctiontoCathode Lead (Note 5)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JL
      196
      癈/W
      Total Device Dissipation (Note 6) T
      A
       = 25癈
       Derate above 25癈
      P
      D
      227
      1.8
      mW
      mW/癈
      Thermal Resistance, JunctiontoAmbient (Note 6)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JA
      550
      癈/W
      Thermal Reference, LeadtoAmbient (Note 6)
      R
      ?/DIV>
      LA
      390
      癈/W
      Thermal Reference, JunctiontoCathode Lead (Note 6)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JL
      160
      癈/W
      Total Device Dissipation (Note 7) T
      A
       = 25癈
       Derate above 25癈
      P
      D
      347
      2.8
      mW
      mW/癈
      Thermal Resistance, JunctiontoAmbient (Note 7)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JA
      360
      癈/W
      Thermal Reference, LeadtoAmbient (Note 7)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">LA
      200
      癈/W
      Thermal Reference, JunctiontoCathode Lead (Note 7)
      R
      ?/DIV>
      JL
      160
      癈/W
      Total Device Dissipation (Note 8) T
      A
       = 25癈
       Derate above 25癈
      P
      D
      368
      2.9
      mW
      mW/癈
      Thermal Resistance, JunctiontoAmbient (Note 8)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JA
      340
      癈/W
      Thermal Reference, LeadtoAmbient (Note 8)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">LA
      208
      癈/W
      Thermal Reference, JunctiontoCathode Lead (Note 8)
      R
      ?/DIV>
      JL
      132
      癈/W
      Total Device Dissipation (Note 9) T
      A
       = 25癈
       Derate above 25癈
      P
      D
      436
      3.5
      mW
      mW/癈
      Thermal Resistance, JunctiontoAmbient (Note 9)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JA
      287
      癈/W
      Thermal Reference, LeadtoAmbient (Note 9)
      R
      ?/DIV>
      LA
      139
      癈/W
      Thermal Reference, JunctiontoCathode Lead (Note 9)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JL
      148
      癈/W
      Total Device Dissipation (Note 10) T
      A
       = 25癈
       Derate above 25癈
      P
      D
      463
      3.7
      mW
      mW/癈
      Thermal Resistance, JunctiontoAmbient (Note 10)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">JA
      270
      癈/W
      Thermal Reference, LeadtoAmbient (Note 10)
      R
      ?SPAN class="pst NSI45015WT1G_2645376_5">LA
      150
      癈/W
      Thermal Reference, JunctiontoCathode Lead (Note 10)
      R
      ?/DIV>
      JL
      120
      癈/W
      Junction and Storage Temperature Range
      T
      J
      , T
      stg
      55 to +150
      5.  FR4 @ 100 mm
      2
      , 1 oz. copper traces, still air.
      6.  FR4 @ 100 mm
      2
      , 2 oz. copper traces, still air.
      7.  FR4 @ 300 mm
      2
      , 1 oz. copper traces, still air.
      8.  FR4 @ 300 mm
      2
      , 2 oz. copper traces, still air.
      9.  FR4 @ 500 mm
      2
      , 1 oz. copper traces, still air.
      10.FR4 @ 500 mm
      2
      , 2 oz. copper traces, still air.
      NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
      Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
      measurements and method of attachment.
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