參數(shù)資料
型號： NTP90N02
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 90 Amps, 24 Volts
中文描述： 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/9頁
文件大小： 75K
代理商： NTP90N02
NTB90N02, NTP90N02
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
24
27
25
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 24 Vdc, V
GS
= 0 Vdc)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.9
3.8
3.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 90 Adc)
(V
GS
= 4.5 Vdc, I
D
= 40 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 20 Adc)
R
DS(on)
5.0
7.5
5.0
7.5
5.8
9.0
5.8
9.0
m
Forward Transconductance (Note 3) (V
DS
= 15 Vdc, I
D
= 10 Adc)
g
FS
25
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
= 0 Vdc,
1 0 MHz)
f = 1.0 MHz)
C
iss
2120
pF
Output Capacitance
C
oss
900
Transfer Capacitance
C
rss
360
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
(V
DD
= 20 Vdc, I
D
= 20 Adc,
4 5 Vdc R
V
GS
= 4.5 Vdc, R
G
= 2.5 )
2 5
t
d(on)
16
ns
Rise Time
t
r
90
TurnOff Delay Time
t
d(off)
28
Fall Time
t
f
60
Gate Charge
(V
DS
= 20 Vdc, I
= 20 Adc,
4 5 Vdc) (Note 3)
V
GS
= 4.5 Vdc) (Note 3)
Q
T
29
nC
Q
1
8.0
Q
2
20
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 40 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.75
1.2
0.65
1.0
Vdc
Reverse Recovery Time
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
dI /dt = 100 A/ s) (Note 3)
100 A/ s) (Note 3)
t
rr
40
ns
t
a
21
t
b
18
Reverse Recovery Stored Charge
Q
RR
0.036
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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