參數(shù)資料
型號: NVT2010BQ
廠商: NXP SEMICONDUCTORS
元件分類: 通用總線功能
英文描述: Bidirectional voltage-level translator for open-drain and push-pull applications
中文描述: GTL TO TTL TRANSCEIVER, PQCC24
封裝: 3.50 X 5.50 M, 0.85 MM HEIGHT, LEAD FREE, PLASTIC, SOT815-1, VQFN-24
文件頁數(shù): 9/26頁
文件大小: 459K
代理商: NVT2010BQ
NVT2008_NVT2010
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 8 September 2010
9 of 26
NXP Semiconductors
NVT2008; NVT2010
Bidirectional voltage-level translator
7.3 Bidirectional level shifting between two different power domains
nominally at the same potential
The less obvious application for the NVT2008/NVT2010 is for level shifting between two
different power domains that are nominally at the same potential, such as a 3.3 V system
where the line crosses power supply domains that under normal operation would be at
3.3 V, but one could be at 3.0 V and the other at 3.6 V, or one could be experiencing a
power failure while the other domain is trying to operate. One of the channel transistors is
used as a second reference transistor with its B side connected to a voltage supply that is
at least 1 V (and preferably 1.5 V) above the maximum possible for either V
pu(A)
or V
pu(B)
.
Then if either pull-up voltage is at 0 V, the channels are disabled, and otherwise the
channels are biased such that they turn OFF at the lower pull-up voltage, and if the two
pull-up voltages are equal, the channel is biased such that it just turns OFF at the
common pull-up voltage.
7.4 Sizing pull-up resistor
The pull-up resistor value needs to limit the current through the pass transistor when it is
in the ON state to about 15 mA. This ensures a pass voltage of 260 mV to 350 mV. If the
current through the pass transistor is higher than 15 mA, the pass voltage also is higher in
the ON state. To set the current through each pass transistor at 15 mA, the pull-up resistor
value is calculated as:
Table 5
summarizes resistor reference voltages and currents at 15 mA, 10 mA, and 3 mA.
The resistor values shown in the +10 % column or a larger value should be used to
ensure that the pass voltage of the transistor would be 350 mV or less. The external driver
The applied enable voltage V
pu(H)
and the applied voltage at V
ref(A)
and V
ref(B)
should be such that V
ref(H)
is at least 1 V higher
than V
ref(A)
and V
ref(B)
for best translator operation.
Fig 10. Bidirectional level shifting between two different power domains
002aae967
A1
A2
VREFA
GND
3
4
VREFB
1
8
7
B1
B2
10 EN
SW
SW
NVT2003
9
200 k
Ω
RPU
RPU
V
pu(B)
= 3.3 V
I
2
C-BUS
DEVICE
SDA
SCL
V
CC
GND
2
V
pu(A)
= 3.3 V
RPU
RPU
I
2
C-BUS
MASTER
SCL
SDA
V
CC
GND
V
pu(H)
A3
5
6
SW
B3
V
pu(B)
R
PU
V
-------------------------------------
0.015
A
V
=
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