參數(shù)資料
型號： NX3008PBKS
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 30 V, 200 mA dual P-channel Trench MOSFET
中文描述： SMALL SIGNAL, FET
封裝： PLASTIC, SC-88, 6 PIN
文件頁數(shù)： 5/17頁
文件大?。?/td> 894K
代理商： NX3008PBKS
NX3008PBKS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
5 of 17
NXP Semiconductors
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Table 6.
Symbol
Per device
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
ambient
in free air
[1]
-
-
300
K/W
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
in free air
[1]
-
390
340
-
445
390
130
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from junction to
solder point
-
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa034
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
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NX3008PBKS,115 功能描述:MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBKT 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT416 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT416 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT416; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBKT,115 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBKV 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 220MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBKV,115 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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