- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378681 > NX3008PBKT (NXP SEMICONDUCTORS) 30 V, 200 mA P-channel Trench MOSFET PDF資料下載
參數(shù)資料
| 型號： | NX3008PBKT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, 200 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封裝： | PLASTIC, SC-75, 6 PIN |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 868K |
| 代理商： | NX3008PBKT |
NX3008PBKT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
15 of 16
NXP Semiconductors
NX3008PBKT
30 V, 200 mA P-channel Trench MOSFET
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at
http://www.nxp.com/profile/terms
, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante
,
Bitport
,
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
EZ-HV
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I2C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
Labelution
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
MoReUse
,
QLPAK
,
Silicon Tuner
,
SiliconMAX
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP B.V.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit:
http://www.nxp.com
For sales office addresses, please send an email to:
salesaddresses@nxp.com
相關PDF資料 |
PDF描述 |
|---|---|
| NX3008PBKV | 30 V, 220 mA dual P-channel Trench MOSFET |
| NX3008PBKW | 30 V, 200 mA P-channel Trench MOSFET |
| NX3008PBK | 30 V, 230 mA P-channel Trench MOSFET |
| NX3L4357GM | Low-ohmic single-pole triple-throw analog switch with enable input |
| S07M-GS08 | Diode Small Signal Switching 1KV 1.5A 2-Pin DO-219AB T/R |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NX3008PBKT,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NX3008PBKV | 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 220MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKV,115 | 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NX3008PBKW | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKW,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。