OP183
Rev. D | Page 5 of 16
ELECTRICAL CHARACTERISTICS @ VS = ±15 V
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0.01
1.0
mV
40°C ≤ TA ≤ +85°C
1.25
mV
Input Bias Current
IB
300
600
nA
40°C ≤ TA ≤ +85°C
400
750
nA
Input Offset Current
IOS
40 ≤ TA ≤ +85°C
11
±50
nA
Input Voltage Range
15
+13.5
V
Common-Mode Rejection Ratio
CMRR
VCM = 15 V to +13.5 V,
–40°C ≤ TA ≤ +85°C
70
86
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ
100
1000
V/mV
Offset Voltage Drift
ΔVOS/ΔT
3
μV/°C
Bias Current Drift
ΔIB/ΔT
1.6
nA/°C
Long-Term Offset Voltage
VOS
1.5
mV
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 2 kΩ to GND, 40°C
≤ TA ≤ +85°C
13.9
14.1
V
Output Voltage Low
VOL
RL = 2 kΩ to GND, 40°C
≤ TA ≤ +85°C
14.05
13.9
V
Short-Circuit Limit
ISC
Source
30
mA
Sink
50
mA
Open-Loop Output Impedance
ZOUT
f = 1 MHz, AV = +1
15
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ± 2.5 V to ± 18 V,
40°C ≤ TA ≤ +85°C
70
112
dB
Supply Current/Amplifier
ISY
VS = ±18 V, VO = 0 V,
40°C ≤ TA ≤ +85°C
1.2
1.75
mA
Supply Voltage Range
VS
3
±18
V
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
10
15
V/μs
Full Power Bandwidth
BWp
1% Distortion
50
kHz
Settling Time
tS
To 0.01%
1.5
μs
Gain Bandwidth Product
GBP
5
MHz
Phase Margin
фm
56
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
2
μV p-p
Voltage Noise Density
en
f = 1 kHz
10
nV/√Hz
Current Noise Density
in
0.4
pA/√Hz
1 Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.