參數(shù)資料
型號: OP213FSZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 19/24頁
文件大小: 0K
描述: IC OPAMP GP 3.4MHZ DUAL LN SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 通用
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 1.2 V/µs
增益帶寬積: 3.4MHz
電流 - 輸入偏壓: 240nA
電壓 - 輸入偏移: 250µV
電流 - 電源: 3mA
電流 - 輸出 / 通道: 40mA
電壓 - 電源,單路/雙路(±): 4 V ~ 36 V,±2 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
OP113/OP213/OP413
Rev. F | Page 4 of 24
E Grade
F Grade
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
AUDIO PERFORMANCE
THD + Noise
VIN = 3 V rms, RL = 2 kΩ,
f = 1 kHz
0.0009
%
Voltage Noise Density
en
f = 10 Hz
9
nV/√Hz
f = 1 kHz
4.7
nV/√Hz
Current Noise Density
in
f = 1 kHz
0.4
pA/√Hz
Voltage Noise
en p-p
0.1 Hz to 10 Hz
120
nV p-p
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 kΩ
0.8
1.2
0.8
1.2
V/μs
Gain Bandwidth Product
GBP
3.4
MHz
Channel Separation
VOUT = 10 V p-p
RL = 2 kΩ, f = 1 kHz
105
dB
Settling Time
tS
to 0.01%, 0 V to 10 V step
9
μs
1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
2 Guaranteed specifications, based on characterization data.
@ VS = 5.0 V, TA = 25°C, unless otherwise noted.
Table 2.
E Grade
F Grade
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP113
125
175
μV
40°C ≤ TA ≤ +85°C
175
250
μV
OP213
150
300
μV
40°C ≤ TA ≤ +85°C
225
375
μV
OP413
175
325
μV
40°C ≤ TA ≤ +85°C
250
400
μV
Input Bias Current
IB
VCM = 0 V, VOUT = 2
300
650
nA
40°C ≤ TA ≤ +85°C
750
nA
Input Offset Current
IOS
VCM = 0 V, VOUT = 2
40°C ≤ TA ≤ +85°C
50
nA
Input Voltage Range
VCM
0
4
V
Common-Mode Rejection
CMR
0 V ≤ VCM ≤ 4 V
93
106
90
dB
0 V ≤ VCM ≤ 4 V,
40°C ≤ TA ≤ +85°C
90
87
dB
Large-Signal Voltage Gain
AVO
OP113, OP213,
RL = 600 Ω, 2 kΩ,
0.01 V ≤ VOUT ≤ 3.9 V
2
V/μV
OP413, RL = 600, 2 kΩ,
0.01 V ≤ VOUT ≤ 3.9 V
1
V/μV
Long-Term Offset Voltage1
VOS
200
350
μV
Offset Voltage Drift2
VOS/T
0.2
1.0
1.5
μV/°C
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