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參數(shù)資料
| 型號： | OP223TX |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 紅外LED |
| 英文描述： | Hi-Reliability GaAIAs Infrared Emitting Diode |
| 中文描述： | 1.02 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| 封裝： | MINIATURE, HERMETICALLY SEALED, PILL PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 453K |
| 代理商： | OP223TX |
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.2 07/06
Page 1 of 3
Hi-Reliability GaAIAs Infrared Emitting Diode
OP223, OP224 (TX, TXV)
OP224 (S)
Description:
Each
OP223 (TX, TXV)
and
OP224 (S, TX, TXV)
device is an 890 nm high reliability gallium aluminum arsenide
infrared emitting diode that is mounted in a miniature hermetically sealed “pill” type package which can be directly
mounted to PCBoards. The gallium aluminum arsenide feature provides twice the radiated output of gallium
arsenide at the same forward current.
After electrical testing by manufacturing, devices are processed to OPTEK’s 100 percent screening program,
which is patterned after MIL-PRF-19500. With a wavelength centered at 890 nm, the
OP223 (TX, TXV) and
OP224 (S, TX, TXV).
TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500.
S devices are processed to OPTEK’s military screening program patterned after
MIL-STD-883
.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Contact your local representative or OPTEK for more information.
Features:
Processed to OPTEK’s military screening program, patterned
after MIL-PRF-19500
Miniature hermetically sealed “pill” package
Twice the power output of GaAs at same drive current
“S” level screening available
Mechanically and spectrally matched to OP600 phototransistors
Part
Number
LED Peak
Wavelength
Output Power/
Minute
Total Beam
Angle
Lead
Length
OP223TX
OP223TXV
OP224S
OP224TX
OP224TXV
890 nm
1.00 mW/cm
2
24°
N/A
1.50 mW/cm
2
Applications:
Non-contact reflective object sensor
Assembly line automation
Machine automation
Machine safety
End of travel sensor
Door sensor
Pin # LED
Sensor
1
Anode Collector
2
Cathode Emitter
1
2
INCHES
DIMENSIONS ARE IN:
[MILLIMETERS]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP223TXV | Hi-Reliability GaAIAs Infrared Emitting Diode |
| OP224S | Hi-Reliability GaAIAs Infrared Emitting Diode |
| OP224TX | Hi-Reliability GaAIAs Infrared Emitting Diode |
| OP224TXV | Hi-Reliability GaAIAs Infrared Emitting Diode |
| OP231W | GaAs HERMETIC INFRARED EMITTING DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP223TXV | 功能描述:紅外發(fā)射源 Pill, GaAlAs Ifrared emitting diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP224 | 功能描述:紅外發(fā)射源 Hermetic 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP224K | 功能描述:紅外發(fā)射源 H. Speed/Power Hrmtc Infrared Emit Diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP224S | 功能描述:紅外發(fā)射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| OP224TX | 功能描述:紅外發(fā)射源 890NM 100mW 100mA RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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