
REV. A
–2–
OP285–SPECIFICATIONS
(@ Vs = 15.0 V, TA = 25 C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
V
OS
I
B
I
B
I
OS
I
OS
V
CM
CMRR
35
250
600
350
400
±
50
±
100
10.5
μ
V
μ
V
nA
nA
nA
nA
V
–40
°
C
≤
T
A
≤
+85
°
C
V
CM
= 0 V
V
CM
= 0 V, –40
°
C
≤
T
A
≤
+85
°
C
V
CM
= 0 V
V
CM
= 0 V, –40
°
C
≤
T
A
≤
+85
°
C
Input Bias Current
100
Input Offset Current
2
2
Input Voltage Range
Common-Mode Rejection
–10.5
V
CM
=
±
10.5 V,
–40
°
C
≤
T
A
≤
+85
°
C
R
L
= 2 k
R
L
= 2 k
, –40
°
C
≤
T
A
≤
+85
°
C
R
L
= 600
80
250
175
106
dB
V/mV
V/mV
V/mV
pF
pF
μ
V
μ
V/
°
C
Large-Signal Voltage Gain
A
VO
A
VO
A
VO
200
7.5
3.7
Common-Mode Input Capacitance
Differential Input Capacitance
Long-Term Offset Voltage
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing
V
OS
V
OS
/
T
Note 1
300
1
V
O
V
O
RL = 2 k
RL = 2 k
, –40
°
C
≤
T
A
≤
+85
°
C
RL = 600
, V
S
=
±
18 V
–13.5
–13
+13.9
+13.9
–16/+14
+13.5
+13
V
V
V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
PSRR
V
S
=
±
4.5 V to
±
18 V
V
S
=
±
4.5 V to
±
18 V,
–40
°
C
≤
T
A
≤
+85
°
C
V
S
=
±
4.5 V to
±
18 V, V
O
= 0 V,
R
L
= x, –40
°
C
≤
T
A
≤
+85
°
C
V
S
=
±
22 V, V
O
, = 0 V, R
L
= x
–40
°
C
≤
T
A
≤
+85
°
C
85
111
dB
80
dB
Supply Current
I
SY
4
5
mA
I
SY
5.5
±
22
mA
V
Supply Voltage Range
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
Settling Time
VS
±
4.5
SR
GBP
o
t
s
t
s
R
L
= 2 k
15
22
9
62
625
750
V/
μ
s
MHz
Degrees
ns
ns
To 0.1%, 10 V Step
To 0.01%, 10 V Step
A
V
= 1, V
OUT
= 8.5 V p-p,
f = 1 kHz, R
L
= 2 k
f = 30 Hz
f = 1 kHz
f = 1 kHz
THD + Noise
≤
0.01%,
R
L
= 2 k
, V
S
=
±
18 V
Distortion
–104
7
6
0.9
dB
nV/
√
Hz
nV/
√
Hz
pA/
√
Hz
Voltage Noise Density
e
n
e
n
i
n
Current Noise Density
Headroom
>12.9
dBu
NOTE
1
Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent wafer lots at 125
°
C, with an LTPD of 1.3.
Specifications subject to change without notice.