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參數(shù)資料
| 型號： | OP285GSZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 0K |
| 描述： | IC OPAMP GP 9MHZ DUAL PREC 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 放大器類型： | 通用 |
| 電路數(shù)： | 2 |
| 轉(zhuǎn)換速率： | 22 V/µs |
| 增益帶寬積： | 9MHz |
| 電流 - 輸入偏壓： | 100nA |
| 電壓 - 輸入偏移： | 35µV |
| 電流 - 電源： | 4mA |
| 電壓 - 電源，單路/雙路(±)： | 9 V ~ 44 V，±4.5 V ~ 22 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
REV. A
–2–
OP285–SPECIFICATIONS (@ Vs = 15.0 V, TA = 25 C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
35
250
V
VOS
–40
°C ≤ TA ≤ +85°C
600
V
Input Bias Current
IB
VCM = 0 V
100
350
nA
IB
VCM = 0 V, –40
°C ≤ TA ≤ +85°C
400
nA
Input Offset Current
IOS
VCM = 0 V
2
±50
nA
IOS
VCM = 0 V, –40
°C ≤ T
A
≤ +85°C2
±100
nA
Input Voltage Range
VCM
–10.5
10.5
V
Common-Mode Rejection
CMRR
VCM =
±10.5 V,
–40
°C ≤ T
A
≤ +85°C
80
106
dB
Large-Signal Voltage Gain
AVO
RL = 2 k
250
V/mV
AVO
RL = 2 k
, –40°C ≤ TA ≤ +85°C
175
V/mV
AVO
RL = 600
200
V/mV
Common-Mode Input Capacitance
7.5
pF
Differential Input Capacitance
3.7
pF
Long-Term Offset Voltage
V
OS
Note 1
300
V
Offset Voltage Drift
VOS/T1
V/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
RL = 2 k
–13.5
+13.9
+13.5
V
VO
RL = 2 k
, –40°C ≤ T
A
≤ +85°C
–13
+13.9
+13
V
RL = 600
, VS = ±18 V
–16/+14
V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS =
±4.5 V to ±18 V
85
111
dB
PSRR
VS =
±4.5 V to ±18 V,
–40
°C ≤ TA ≤ +85°C80
dB
Supply Current
ISY
VS =
±4.5 V to ±18 V, VO = 0 V,
RL = x, –40
°C ≤ T
A
≤ +85°C4
5
mA
ISY
VS =
±22 V, VO, = 0 V, RL = x
–40
°C ≤ TA ≤ +85°C
5.5
mA
Supply Voltage Range
VS
±4.5
±22
V
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
15
22
V/
s
Gain Bandwidth Product
GBP
9
MHz
Phase Margin
o
62
Degrees
Settling Time
ts
To 0.1%, 10 V Step
625
ns
ts
To 0.01%, 10 V Step
750
ns
Distortion
AV = 1, VOUT = 8.5 V p-p,
f = 1 kHz, RL = 2 k
–104
dB
Voltage Noise Density
en
f = 30 Hz
7
nV/
√Hz
en
f = 1 kHz
6
nV/
√Hz
Current Noise Density
in
f = 1 kHz
0.9
pA/
√Hz
Headroom
THD + Noise
≤ 0.01%,
RL = 2 k
, V
S =
±18 V
>12.9
dBu
NOTE
1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent wafer lots at 125
°C, with an LTPD of 1.3.
Specifications subject to change without notice.
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