REV. B
–4–
OP193/OP293/OP493
ELECTRICAL SPECIFICATIONS (@ V
S = 3.0 V, VCM = 0.1 V, TA = 25 C unless otherwise noted)
“E” Grade
“F” Grade
Parameter
Symbol
Conditions
Min Typ
Max
Min Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
OP193
75
150
V
OP193, –40
°C ≤ TA ≤ +125°C
175
250
V
OP293
100
250
V
OP293, –40
°C ≤ TA ≤ +125°C
200
350
V
OP493
125
275
V
OP493, –40
°C ≤ TA ≤ +125°C
225
375
V
Input Bias Current
IB
–40
°C ≤ T
A
≤ +125°C15
20
nA
Input Offset Current
IOS
–40
°C ≤ TA ≤ +125°C2
4
nA
Input Voltage Range
VCM
02
V
Common-Mode Rejection
CMRR
0.1
≤ VCM ≤ 2 V
97
116
94
116
dB
0.1
≤ V
CM
≤ 2 V,
–40
°C ≤ TA ≤ +125°C
9087dB
Large Signal Voltage Gain
AVO
RL = 100 k
, 0.03 ≤ V
OUT
≤ 2 V
100
V/mV
–40
°C ≤ TA ≤ +85°C
75
V/mV
–40
°C ≤ T
A
≤ +125°C
100
V/mV
Long Term Offset Voltage
VOS
Note 1
150
300
V
Offset Voltage Drift
V
OS/
T Note 2
0.2
1.25
V/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
IL = 1 mA
2.1
2.14
2.1
2.14
V
IL = 1 mA,
–40
°C ≤ T
A
≤ +125°C
1.9
V
IL = 5 mA
1.9
2.1
1.9
2.1
V
Output Voltage Swing Low
VOL
IL = –1 mA
280
400
280
400
mV
IL = –1 mA
–40
°C ≤ T
A
≤ +125°C
500
mV
IL = –5 mA
700
900
700
900
mV
Short Circuit Current
ISC
±8
±8mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = +1.7 V to +6 V,
100
97
–40
°C ≤ T
A
≤ +125°C
9490dB
Supply Current/Amplifier
ISY
VCM = 1.5 V, RL =
∞
14.5 22
A
–40
°C ≤ T
A
≤ +125°C22
22
A
Supply Voltage Range
VS
+2
±18
+2
±18
V
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
65
nV/
√Hz
Current Noise Density
in
f = 1 kHz
0.05
pA/
√Hz
Voltage Noise
en p-p
0.1 Hz to 10 Hz
3
V p-p
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
10
V/ms
Gain Bandwidth Product
GBP
25
kHz
Channel Separation
VOUT = 10 V p-p,
RL = 2 k
, f = 1 kHz
120
dB
NOTES
1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125
°C, with an LTPD of 1.3.
2Offset voltage drift is the average of the –40
°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.