OP295/OP495
Rev. G | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Offset Voltage
VOS
30
300
μV
40°C ≤ TA ≤ +125°C
800
μV
Input Bias Current
IB
8
20
nA
40°C ≤ TA ≤ +125°C
30
nA
Input Offset Current
IOS
±1
±3
nA
40°C ≤ TA ≤ +125°C
±5
nA
Input Voltage Range
VCM
0
4.0
V
Common-Mode Rejection Ratio
CMRR
0 V ≤ VCM ≤ 4.0 V, 40°C ≤ TA ≤ +125°C
90
110
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V
1000
10,000
V/mV
RL = 10 kΩ, 40°C ≤ TA ≤ +125°C
500
V/mV
Offset Voltage Drift
ΔVOS/ΔT
1
5
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
RL = 100 kΩ to GND
4.98
5.0
V
RL = 10 kΩ to GND
4.90
4.94
V
IOUT = 1 mA, 40°C ≤ TA ≤ +125°C
4.7
V
Output Voltage Swing Low
VOL
RL = 100 kΩ to GND
0.7
2
mV
RL = 10 kΩ to GND
0.7
2
mV
IOUT = 1 mA, 40°C ≤ TA ≤ +125°C
90
mV
Output Current
IOUT
±11
±18
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
±1.5 V ≤ VS ≤ ±15 V
90
110
dB
±1.5 V ≤ VS ≤ ±15 V, –40°C ≤ TA ≤ +125°C
85
dB
Supply Current per Amplifier
ISY
VOUT = 2.5 V, RL = ∞, 40°C ≤ TA ≤ +125°C
150
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 kΩ
0.03
V/μs
Gain Bandwidth Product
GBP
75
kHz
Phase Margin
θO
86
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
1.5
μV p-p
Voltage Noise Density
en
f = 1 kHz
51
nV/√Hz
Current Noise Density
in
f = 1 kHz
<0.1
pA/√Hz
VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
100
500
μV
Input Bias Current
IB
8
20
nA
Input Offset Current
IOS
±1
±3
nA
Input Voltage Range
VCM
0
2.0
V
Common-Mode Rejection Ration
CMRR
0 V ≤ VCM ≤ 2.0 V, 40°C ≤ TA ≤ +125°C
90
110
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ
750
V/mV
Offset Voltage Drift
VOS/T
1
μV/°C