OP467
Rev. I | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
@ VS = ±15.0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0.2
0.5
mV
40°C ≤ TA ≤ +85°C
1
mV
Input Bias Current
IB
VCM = 0 V
150
600
nA
VCM = 0 V, 40°C ≤ TA ≤ +85°C
150
700
nA
Input Offset Current
IOS
VCM = 0 V
10
100
nA
VCM = 0 V, 40°C ≤ TA ≤ +85°C
10
150
nA
Common-Mode Rejection
CMR
VCM = ±12 V
80
90
dB
CMR
VCM = ±12 V, 40°C ≤ TA ≤ +85°C
80
88
dB
Large Signal Voltage Gain
AVO
RL = 2 kΩ
83
86
dB
RL = 2 kΩ, 40°C ≤ TA ≤ +85°C
77.5
dB
Offset Voltage Drift
ΔVOS/ΔT
3.5
μV/°C
Bias Current Drift
ΔIB/ΔT
0.2
pA/°C
Long-Term Offset Voltage Dri
ft1ΔVOS/ΔT
750
μV
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
RL = 2 kΩ
±13.0
±13.5
V
RL = 2 kΩ, 40°C ≤ TA ≤ +85°C
±12.9
±13.12
V
Power Supply Rejection Ratio
PSRR
±4.5 V ≤ VS ≤ ±18 V
96
120
dB
40°C ≤ TA ≤ +85°C
86
115
dB
Supply Current
ISY
VO = 0 V
8
10
mA
VO = 0 V, 40°C ≤ TA ≤ +85°C
13
mA
Supply Voltage Range
VS
±4.5
±18
V
DYNAMIC PERFORMANCE
Gain Bandwidth Product
GBP
AV = +1, CL = 30 pF
28
MHz
Slew Rate
SR
VIN = 10 V step, RL = 2 kΩ, CL = 30 pF
AV = +1
125
170
V/μs
AV = 1
350
V/μs
Full-Power Bandwidth
BWρ
VIN = 10 V step
2.7
MHz
Settling Time
tS
To 0.01%, VIN = 10 V step
200
ns
Phase Margin
θ0
45
Degrees
Input Capacitance
Common Mode
2.0
pF
Differential
1.0
pF
NOISE PERFORMANCE
Voltage Noise
eN p-p
f = 0.1 Hz to 10 Hz
0.15
μV p-p
Voltage Noise Density
eN
f = 1 kHz
6
nV/√Hz
Current Noise Density
iN
f = 1 kHz
0.8
pA/√Hz
1 Long-term offset voltage drift is guaranteed by 1000 hrs. Life test performed on three independent wafer lots at 125°C, with an LTPD of 1.3.