參數(shù)資料
型號(hào)： OP755B
廠商： OPTEK TECHNOLOGY INC
元件分類： 光敏三極管
英文描述： NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流3.40mA)
中文描述： PHOTO TRANSISTOR DETECTOR
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 511K
代理商： OP755B
Fea ures
Wide receiving angle
Variety of sensitivity ranges
Side-looking package for space limited
applications
Base-emitter resistor provides ambient
light protection
De scrip ion
The OP755 device consists of a NPN
silicon phototransistor molded in blue
tinted epoxy packages. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy PC
board mounting of slotted optical
switches or optical interrupt detectors.
The series is mechanically and spectrally
matched to the OP140 and OP240 series
of infrared emitting diodes.
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit er Re verse Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col ec or DC Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
°
C to +100
°
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
°
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is rec om mended. Du a ion can be ex ended to 10 sec. max. When flow sol der ng.
Max. 20 grams force may be ap plied to leads when sol der ng.
(2) Derate linearly 2.0 mW/
°
C above 25
°
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to 50
m
A.
Typi cal Per orm ance Curves
Prod uct Bul e in OP755
June 1999
NPN Pho o ran sis or with Base- Emitter Resistor
Types OP755A, OP755B, OP755C, OP755D
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Typical Spectral Response
Wavelength - nm
9
Sche matic
相關(guān)PDF資料
PDF描述
OP755D NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流5.50mA)
OP755C NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶體管，內(nèi)帶一個(gè)基極-發(fā)射極電阻,集電極電流2.25mA)
OP800A NPN SILICON PHOTOTRANSISTORS
OP800B NPN SILICON PHOTOTRANSISTORS
OP800C NPN SILICON PHOTOTRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
OP755C 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
OP755D 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
OP760A 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
OP760B 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
OP760C 功能描述:光電晶體管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
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