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參數(shù)資料
| 型號： | OP804TXV |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | Hi-Reliability NPN Sil icon Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | HERMETIC, TO-18,3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | OP804TXV |
Fea ures
High reliability screening patterned
after MIL-PRF-19500
Each lot subjected to Group A & B Lot
Acceptance
Lensed for high sensitivity
Mechanically and spectrally matched
to the OP235TX/TXV and
OP236TX/TXV series IREDs
De scrip ion
Each device in the OP803, OP804 and
OP805TX/TXV series consists of a high
reliability NPN phototransistor mounted in
a lensed, hermetically sealed, TO-18
package. All devices are 100% screened
per Table II of MIL-PRF-19500. Typical
screening and lot acceptance tests are
provided on page 13-4.
The OP803, OP804 and OP805 TX/TXV
series lensing creates an acceptance half
angle of 12
o<D>
measured from the optical
axis to the half power point. The series
can be matched with either a solid state
infrared source, such as the OP235 and
OP236 TX/TXV series IREDs, or can be
used to sense infrared content in a visible
light source, such as a tungsten bulb or
sunlight for automatic brightness control.
Ab so ute Max mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Stor age Tem per a ure Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Op er ating Tem per a ure Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Lead Sol dering Tem per a ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(1)
Col ec or-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Col ec or-Base Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit er-Base Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Emit er-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dis si pa ion. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 2.5 mW/
o
C above 25
o
C.
Prod uct Bul e in OP803TX
Sep em ber 1996
Hi-Reliability NPN Sil con Phototransistor
Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV
Optek Tech nol ogy, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396
13-34
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP803 | Hi-Reliability NPN Sil icon Phototransistor |
| OP803TX | Hi-Reliability NPN Sil icon Phototransistor |
| OP804TX | Hi-Reliability NPN Sil icon Phototransistor |
| OP830SL | NPN Silicon Photodarlington(NPN達(dá)林頓光晶體管,集電極最小電流15mA,可替代OP830和K9020) |
| OP830WSL | NPN Silicon Photodarlington(NPN達(dá)林頓光晶體管,集電極最小電流4mA,可替代OP830W和K9030) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP805 | 制造商:OPTEK 制造商全稱:OPTEK 功能描述:NPN Silicon Phototransistors |
| OP805SL | 功能描述:光電晶體管 PHOTOSENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP805TX | 功能描述:光電晶體管 TO-18, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP805TXV | 功能描述:光電晶體管 TO-18, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP80G | 制造商:Analog Devices 功能描述:80G |
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