參數(shù)資料
型號： P0080EBRP1
英文描述： MCU CMOS 44 LD 10MHZ 4K EPRM, -40C to +85C, 44-MQFP, TRAY
中文描述： SIDAC的| 25V的五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 109/161頁
文件大?。?/td> 986K
代理商： P0080EBRP1
SIDACtor
Data Book
UL 497B
Teccor Electronics
(972) 580-7777
4 - 35
R
R
5,#&<+
Overview
UL 497B provides requirements for protectors which are used in communication and
fire alarm circuits. All SIDACtors are evaluated against this standard as individual
components and are listed as UL 497B compliant devices under UL file No. E133083.
Construction and Performance
UL 497B is divided into two sections covering construction and performance
requirements. Table 4-22 lists the contents of each main section.
Table 4-22 UL497B
Performance Requirements Specific to the SIDACtor
1.
Strike Voltage Breakdown Test
- Protectors are required to breakdown within the
manufacturers specified breakdown range or within 10% of a nominal single
breakdown voltage rating (Figure 4-18).
2.
Endurance Conditioning
- Protectors are subjected to 50 impulse cycles. Each
cycle is a 1000V
PK
, 10A, 10x1000μs pulse. Pulses are applied in one polarity at
10 second intervals, and then repeated in the opposite polarity.
3.
Variable Ambient Conditioning
- Protectors must comply with the strike voltage
requirements after being subjected to an ambient temperature of 0
°
C for 4
hours and again after being subjected to an ambient temperature of 49
°
C for an
additional 4 hours.
4.
Discharge Test
- Protectors must comply with strike voltage requirements after
being subjected to five successive discharges from a 2μF capacitor charged to
1000V
DC
(Figure 4-19).
Construction
Performance
General
General
Corrosion protection
Strike Voltage Breakdown
Field-Wiring Connections
Endurance Conditioning
Components
Temperature Test
Spacing
Dielectric Voltage-Withstand test
Fuses
Vibration Conditioning
Jarring Test
Discharge Test
Repeated Discharge Test
Polymeric Materials Test
High Temperature Test
Marking
相關(guān)PDF資料
PDF描述
P0080EBRP2 MCU CMOS 40 LD 20MHZ 4K EPRM, 0C to +70C, 40-PDIP, TUBE
P0080EC SIDAC|25V V(BO) MAX|800MA I(S)|TO-92VAR
P0080ECRP1 MCU CMOS 40 LD 20MHZ 4K EPRM, -40C to +125C, 40-PDIP, TUBE
P0080ECRP2 MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to +125C, 44-MQFP, TRAY
P0300EC MCU CMOS 40 LD 10MHZ 8K OTP, 0C to +70C, 40-PDIP, TUBE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P0080EBRP2 功能描述:硅對稱二端開關(guān)元件 100A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EC 功能描述:硅對稱二端開關(guān)元件 500A 6V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080EC MCL 功能描述:硅對稱二端開關(guān)元件 TO-92 MicroCapacitance (MC) SIDACtor Device RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080ECAP 功能描述:硅對稱二端開關(guān)元件 6V 500A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P0080ECL 功能描述:硅對稱二端開關(guān)元件 6V 500A TO92 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
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