參數(shù)資料
型號: P0080ECRP2
英文描述: MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to +125C, 44-MQFP, TRAY
中文描述: SIDAC的| 25V的五(公報)最大| 800mA的我(縣)|對92VAR
文件頁數(shù): 16/161頁
文件大小: 986K
代理商: P0080ECRP2
Electrical Parameters Defined
SIDACtor
Data Book
1 - 6
Teccor Electronics
(972) 580-7777
C
O
- Off-state Capacitance
Typical capacitance measured in off-state.
dI/dt - Rate of Rise of Current
Maximum rated value of the acceptable rate of rise in current over time.
dV/dt - Rate of Rise of Voltage
Rate of applied voltage over time.
I
S
- Switching Current
Maximum current required to switch to on-state.
I
DRM
- Leakage Current
Maximum peak off-state current measured at V
DRM.
I
H
- Holding Current
Minimum current required to maintain on-state.
I
PP
- Peak Pulse Current
Maximum rated peak impulse current.
I
T
- On-state Current
Maximum rated continuous on-state current.
I
TSM
- Peak One Cycle Surge Current
Maximum rated one cycle AC current.
V
S
- Switching Voltage
Maximum voltage prior to switching to on-state.
V
DRM
- Peak off-state Voltage
Maximum voltage that can be applied while maintaining off-state.
V
F
- On-state Forward Voltage
Maximum forward voltage measured at rated on-state current.
V
T
- On-state Voltage
Maximum voltage measured at rated on-state current.
NOTE:
On-state is defined as the low impedance condition reached during full
conduction. It is also referred to as the crowbar condition and simulates a short
circuit.
Off-state is defined as the high impedance condition prior to beginning
conduction. It is also referred to as the blocking condition and simulates an
open circuit.
相關PDF資料
PDF描述
P0300EC MCU CMOS 40 LD 10MHZ 8K OTP, 0C to +70C, 40-PDIP, TUBE
P0300ECRP1 MCU CMOS 40 LD 10MHZ 8K OTP, -40C to +125C, 40-PDIP, TUBE
P0300ECRP2 MCU CMOS 40 LD 10MHZ 8K OTP, -40C to +85C, 40-PDIP, TUBE
P0300SARP MCU CMOS 44 LD 20MHZ 8K OTP, 0C to +70C, 44-PLCC, TUBE
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