參數(shù)資料
型號: P0115DA1AA3
英文描述: MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to +125C, 44-TQFP, TRAY
中文描述: 晶閘管0.8A 400V
文件頁數(shù): 3/5頁
文件大小: 68K
代理商: P0115DA1AA3
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 :
Maximum average power dissipation ver-
sus averageon-statecurrent.
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
0.2
0.4
0.6
0.8
1
I
(A)
T(AV)
= 180
o
DC
Tlead ( C)
Fig.3 :
Averageon-state current versus lead tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.040
-20
0
20
40
60
80
100
120
140
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
Tj( C)
o
Fig.5:
Relativevariationof gatetriggercurrent and
holdingcurrent versus junction temperature.
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
-45
-65
-85
-105
-125
P (W)
Tlead ( C)
o
Rth(j-l)
Rth(j-a)
Tamb ( C)
Fig.2 :
Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb andTlead).
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance
junctionto ambient versuspulse duration.
1
10
100
1,000
0
1
2
3
4
5
6
7
8
Tj initial = 25 C
Number of cycles
I
(A)
TSM
Fig.6 :
Non repetitivesurge peak on-state current
versusnumber of cycles.
P01xxxA/B
3/5
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